Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors

ABSTRACT

A light emitting device includes a substrate having a surface region and a light emitting diode overlying the surface region. The light emitting diode is fabricated on a semipolar or nonpolar GaN containing substrate and emits electromagnetic radiation of a first wavelength. The diode includes a quantum well region characterized by an electron wave function and a hole wave function. The electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. The device has a transparent phosphor overlying the light emitting diode. The phosphor is excited by the substantially polarized emission to emit electromagnetic radiation of a second wavelength.

CROSS-REFERENCES TO RELATED APPLICATIONS

This application is a continuation application of U.S. application Ser.No. 12/754,886 filed on Apr. 6, 2010, now allowed, which claims priorityto U.S. Provisional Application No. 61/167,447 filed on Apr. 7, 2009,each of which is incorporated by reference in its entirety.

BACKGROUND OF THE INVENTION

This invention relates generally to lighting techniques. Morespecifically, embodiments of the invention include techniques forcombining one or more colored light emitting diodes (LEDs), such asviolet, blue, blue and yellow, or blue and green, fabricated on bulksemipolar or nonpolar materials with use of materials such as phosphors,which emit light. In other embodiments, the entities may be also anywavelength conversion material(s) or energy conversion material(s), orthe like. Herein the term “phosphor” is used to include all such typesof materials. Merely by way of example, the invention can be applied toapplications such as white lighting, multi-colored lighting, generalillumination, decorative lighting, automotive and aircraft lamps, streetlights, lighting for plant growth, indicator lights, lighting for flatpanel displays, other optoelectronic devices, and the like.

In the late 1800's, Thomas Edison invented the light bulb. Theconventional light bulb, commonly called the “Edison bulb,” has beenused for over one hundred years. The conventional light bulb uses atungsten filament enclosed in a glass bulb sealed in a base, which isscrewed into a socket. The socket is coupled to an AC power or DC powersource. The conventional light bulb can be found commonly in houses,buildings, and outdoor lightings, and other areas requiring light.Unfortunately, drawbacks exist with the conventional Edison light bulb.In particular, more than 90% of the energy used for the conventionallight bulb dissipates as thermal energy. Additionally, the conventionallight bulb routinely fails, often due to thermal expansion andcontraction, of the filament element.

To overcome some of the drawbacks of the conventional light bulb,fluorescent lighting has been developed. Fluorescent lighting uses anoptically clear tube structure filled with a halogen gas and, whichtypically also contains mercury. A pair of electrodes is coupled betweenthe halogen gas and couples to an alternating power source through aballast. Once the gas has been excited, it discharges to emit light.Typically, the optically clear tube is coated with phosphors, which areexcited by the light. Many building structures use fluorescent lightingand, more recently, fluorescent lighting has been fitted onto a basestructure, which couples into a standard socket.

Solid state lighting techniques have also been used. Solid statelighting relies upon semiconductor materials to produce light emittingdiodes, commonly called LEDs. At first, red LEDs were demonstrated andintroduced into commerce. Red LEDs use Aluminum Indium Gallium Phosphideor AlInGaP semiconductor materials. Most recently, Shuji Nakamurapioneered the use of InGaN materials to produce LEDs emitting light inthe blue color range for blue LEDs. The blue colored LEDs led toinnovations such as solid state white lighting, the blue laser diode,which in turn enabled the Blu-Ray™ (trademark of the Blu-Ray DiscAssociation) DVD player, and other developments. Other colored LEDs havealso been proposed.

High intensity UV, blue, and green LEDs based on GaN have been proposedand even demonstrated with some success. Efficiencies have typicallybeen highest in the UV-violet, dropping off as the emission wavelengthincreases to blue or green. Unfortunately, achieving high intensity,high-efficiency GaN-based green LEDs has been particularly problematic.The performance of optoelectronic devices fabricated on conventionalc-plane GaN suffer from strong internal polarization fields, whichspatially separate the electron and hole wave functions and lead to poorradiative recombination efficiency. Since this phenomenon becomes morepronounced in InGaN layers with increased indium content for increasedwavelength emission, extending the performance of UV or blue GaN-basedLEDs to the blue-green or green regime has been difficult. Furthermore,since increased indium content films often require reduced growthtemperature, the crystal quality of the InGaN films is degraded. Thedifficulty of achieving a high intensity green LED has lead scientistsand engineers to the term “green gap” to describe the unavailability ofsuch green LED. In addition, the light emission efficiency of typicalGaN-based LEDs drops off significantly at higher current densities, asare required for general illumination applications, a phenomenon knownas “roll-over.” Other limitations with blue LEDs using c-plane GaNexist. These limitations include poor yields, low efficiencies, andreliability issues. Although highly successful, solid state lightingtechniques must be improved for full exploitation of their potential.These and other limitations may be described throughout the presentspecification and more particularly below.

Light emission from GaN-based LEDs is typically unpolarized. Someapplications, for example, liquid crystal displays such as are employedin televisions, computer monitors, and other large-area displays,require that the light source be polarized. Polarization is typicallyachieved by employing a conventional polarizer together with anunpolarized light source. However, this approach wastes more than 50% ofthe energy of the light source, increasing cost and decreasingefficiency, and results in increased complexity. If the light source hada modest degree of polarization the polarizer could still be employed,but the efficiency would be greater because a smaller fraction of theemitted light would be wasted. If the polarization of the source weresufficiently high it may be possible to omit the polarizer altogether,increasing efficiency and decreasing cost and system complexity.

BRIEF SUMMARY OF THE INVENTION

According to the present invention, techniques for improved lighting areprovided. More specifically, embodiments of the invention includetechniques for combining one or more colored LED devices, such asviolet, blue, blue and yellow, or blue and green, fabricated on bulksemipolar or nonpolar materials with use of entities such as phosphors,which emit light. In other embodiments, the entities may be also anywavelength conversion material(s) or energy conversion material(s), orthe like. By way of example, the invention can be applied toapplications such as white lighting, multi-colored lighting, generalillumination, decorative lighting, automotive and aircraft lamps, streetlights, lighting for plant growth, indicator lights, lighting for flatpanel displays, other optoelectronic devices, and the like.

In a specific embodiment, the present invention provides a packagedlight emitting device. The packaged device includes a substrate membercomprising a surface region. At least one light emitting diode overliesthe surface region. At least one of the light emitting diodes isfabricated on a semipolar or nonpolar GaN containing substrate. The atleast one light emitting diode fabricated on the semipolar or nonpolarGaN containing substrate emit substantially polarized emission of one ormore first wavelengths. In a specific embodiment, the device also has anoptically transparent member coupled to the at least one light emittingdiode. An optical path is provided between the at least one lightemitting diode and the optically transparent member. In a specificembodiment, a thickness of one or more entities is formed overlying theoptically transparent member. Alternatively, the one or more entitiesare formed within the optically transparent member or underlying theoptically transparent member or any combination of these configurations.The one or more of the entities are excited by the substantiallypolarized emission to emit electromagnetic radiation at one or moresecond wavelengths.

In a specific embodiment, the present invention includes deviceconfigurations having different spatial locations for the thickness ofthe one or more entities. In a specific embodiment, the thickness of theone or more entities is formed within the optically transparent member.Alternatively, the thickness of the one or more entities is formedunderlying the optically transparent member according to a specificembodiment. In yet another alternative specific embodiment, thethickness of the one or more entities is formed within a spatial regionof the light path between the at least one light emitting diode and theoptically transparent member. Still further, the present device can haveany combination of these configurations, and others. Of course, therecan be variations, modifications, and alternatives.

In yet another alternative specific embodiment, the present inventionprovides a packaged light emitting device. The device includes asubstrate member comprising a surface region and at least one lightemitting diode overlying the surface region. In a specific embodiment,at least one of the light emitting diode is fabricated on a semipolar ornonpolar GaN containing substrate. The at least one light emitting diodeis fabricated on the semipolar or nonpolar GaN containing substrateemits substantially polarized emission of one or more first wavelengths.Preferably the light emitting diode includes a quantum well regioncharacterized by an electron wave function and a hole wave function. Ina specific embodiment, the electron wave function and the hole wavefunction are substantially overlapped within a predetermined spatialregion of the quantum well region. In a specific embodiment, the devicehas a phosphor overlying the at least one light emitting diode device.The phosphor is excited by the substantially polarized emission andemitting electromagnetic radiation of one or more second wavelengths.

Still further, the present invention provides an optical device. Theoptical device includes at least one light emitting diode device. In aspecific embodiment, at least one of the light emitting diode devices isprovided on at least a semipolar or nonpolar GaN containing substrateand emits electromagnetic radiation of one or more first wavelengths. Ina preferred embodiment, the at least one light emitting diode device hasrespective one or more emission surfaces. One or more transparentphosphor entities is overlying the one or more emission surfaces of theat least one light emitting diode device according to a specificembodiment. One or more of the entities is excited by emission from atleast one of the light emitting diode devices to emit electromagneticradiation at one or more second wavelengths according to a specificembodiment. At least one optical coupling region is provided between theone or more emission surfaces of the at least one light emitting diodedevice and the one or more transparent phosphor entities.

Moreover, the present invention provides a method for optical devices.The method includes emitting electromagnetic radiation of one or morefirst wavelengths provided from at least one or more emissive surfacescorresponding respectively to at least one light emitting diode device.At least one of the light emitting diode devices IS provided on at leasta semipolar or nonpolar GaN containing substrate according to a specificembodiment. The method also includes subjecting one or more transparentphosphor entities overlying the one or more emission surfaces of the atleast one light emitting diode device with at least the emission of theone or more first wavelengths of at least one of the light emittingdiode devices according to a specific embodiment. The method includesemitting electromagnetic radiation at one or more second wavelengthsexcited from at least the one or more transparent phosphor entitiesaccording to one or more embodiments.

One or more benefits may be achieved using one or more of the specificembodiments. As an example, the present device and method provides foran improved lighting technique with improved efficiencies. In otherembodiments, the present method and resulting structure are easier toimplement using conventional technologies. In some embodiments, thepresent device and method provide polarized light at two or morewavelengths that are useful in displays and in conjunction withpolarizing transmission filters. In a specific embodiment, the blue LEDdevice is capable of emitting electromagnetic radiation at a wavelengthrange from about 450 nanometers to about 495 nanometers and theyellow-green LED device is capable of emitting electromagnetic radiationat a wavelength range from about 495 nanometers to about 590 nanometers,although there can also be some variations. In one or more preferredembodiments, the emitted light can have a polarization ratio of greaterthan zero, or 0.5 and greater, or 0.6 and greater, or 0.7 and greater,or 0.8 and greater, or 0.9 and greater, or 0.95 and greater. Dependingupon the embodiment, one or more of these benefits can be achieved.These and other benefits are further described throughout the presentspecification and more particularly below.

The present invention achieves these benefits and others in the contextof known process technology. Further understanding of the nature andadvantages of the present invention may be realized by reference to thisspecification and the drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a simplified diagram of a light emitting diode coupled to atransparent phosphor according to an embodiment of the presentinvention;

FIG. 2 is a simplified diagram of a light emitting diode coupled to atransparent phosphor according to another embodiment of the presentinvention;

FIG. 3 is a simplified diagram of a light emitting diode coupled to atransparent phosphor according to still another embodiment of thepresent invention;

FIG. 4 is a simplified diagram of a light emitting diode coupled to atransparent phosphor according to yet another embodiment of the presentinvention;

FIG. 5 is a simplified diagram of a light emitting diode coupled to atransparent phosphor according to still another embodiment of thepresent invention;

FIG. 6 is a simplified diagram of a packaged light emitting device usinga recessed configuration according to an embodiment of the presentinvention;

FIGS. 7 through 10 illustrate a simplified method of assembling thelight emitting device of FIG. 6 according to an embodiment of thepresent invention;

FIG. 11 is a simplified diagram of an alternative packaged lightemitting device using multiple devices according to an embodiment of thepresent invention;

FIGS. 12 through 15 illustrate a simplified method of assembling thelight emitting device of FIG. 11 according to an embodiment of thepresent invention;

FIG. 16 is a simplified diagram of yet an alternative packaged lightemitting device using an optical path to a plane region according to anembodiment of the present invention;

FIGS. 17 through 20 illustrate a simplified method of assembling thelight emitting device of FIG. 11 according to an embodiment of thepresent invention;

FIG. 21 is a simplified diagram of a yet an alternative packaged lightemitting device using an optical path to a plane region and fillermaterial according to an embodiment of the present invention;

FIGS. 22 through 25 illustrate a simplified method of assembling thelight emitting device of FIG. 21 according to an embodiment of thepresent invention;

FIG. 26 is a simplified diagram of a yet an alternative packaged lightemitting device using an optical path to a plane region according to anembodiment of the present invention;

FIGS. 27 through 30 illustrate a simplified method of assembling thelight emitting device of FIG. 26 according to an embodiment of thepresent invention;

FIG. 31 is a simplified diagram of still another alternative packagedlight emitting device having multiple transparent phosphor entitiesaccording to an embodiment of the present invention;

FIG. 32 is a simplified diagram of yet an alternative light emittingdiode device having a patterned or textured surface region according toan embodiment of the present invention; and

FIG. 33A shows an experimental setup according to certain embodiments;

FIGS. 33B and 33C are simplified plots of experimental resultsillustrating polarization of emitted light for a transparent phosphorentity according to embodiments of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

According to the present invention, improved lighting technology isprovided. More specifically, embodiments of the invention includetechniques for combining one or more colored LED devices, such asviolet, blue, blue and yellow, or blue and green, fabricated on bulksemipolar or nonpolar materials with use of entities such as phosphors(which include phosphorescent, luminescent or fluorescent materials),which emit light. In other embodiments, the entities may be also anywavelength conversion material(s) or energy conversion material(s), orthe like. Merely by way of example, the invention can be applied toapplications such as white lighting, multi-colored lighting, generalillumination, decorative lighting, automotive and aircraft lamps, streetlights, lighting for plant growth, indicator lights, lighting for flatpanel displays and projection displays, other optoelectronic devices,and the like.

We have discovered that breakthroughs in the field of GaN-basedoptoelectronics have demonstrated the great potential of devicesfabricated on bulk nonpolar and semipolar GaN substrates. The lack ofstrong polarization-induced electric fields that plague conventionaldevices on c-plane GaN leads to a enhanced radiative recombinationefficiency in the light emitting InGaN layers. Furthermore, the natureof the electronic band structure and the anisotropic in-plane strainleads to highly polarized light emission, which will offer severaladvantages in applications such as projection and display backlighting.

Of particular importance to the field of lighting is the progress oflight emitting diodes (LED) fabricated on nonpolar and semipolar GaNsubstrates. Such devices making use of InGaN light emitting layers haveexhibited record output powers at extended operation wavelengths intothe violet region (390-430 nm), the blue region (430-490 nm), the greenregion (490-560 nm), and the yellow region (560-600 nm). For example, aviolet LED, with a peak emission wavelength of 402 nm, was recentlyfabricated on an m-plane (1-100) GaN substrate and demonstrated greaterthan 45% external quantum efficiency, despite having no light extractionenhancement features, and showed excellent performance at high currentdensities, with minimal roll-over [K.-C. Kim, M. C. Schmidt, H. Sato, F.Wu, N. Fellows, M. Saito, K. Fujito, J. S. Speck, S. Nakamura, and S. P.DenBaars, “Improved electroluminescence on nonpolar m-plane InGaN/GaNquantum well LEDs”, Phys. Stat. Sol. (RRL) 1, No. 3, 125 (2007).].Similarly, a blue LED, with a peak emission wavelength of 468 nm,exhibited excellent efficiency at high power densities and significantlyless roll-over than is typically observed with c-plane LEDs [K. Iso, H.Yamada, H. Hirasawa, N. Fellows, M. Saito, K. Fujito, S. P. DenBaars, J.S. Speck, and S. Nakamura, “High brightness blue InGaN/GaN lightemitting diode on nonpolar m-plane bulk GaN substrate”, Japanese Journalof Applied Physics 46, L960 (2007).]. Two promising semipolarorientations are the (10-1-1) and (11-22) planes. These planes areinclined by 62.0 degrees and by 58.4 degrees, respectively, with respectto the c-plane. University of California, Santa Barbara (UCSB) hasproduced highly efficient LEDs on (10-1-1) GaN with over 65 mW outputpower at 100 mA for blue-emitting devices [H. Zhong, A. Tyagi, N.Fellows, F. Wu, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P.DenBaars, and S. Nakamura, “High power and high efficiency blue lightemitting diode on freestanding semipolar (1011) bulk GaN substrate”,Applied Physics Letters 90, 233504 (2007)] and on (11-22) GaN with over35 mW output power at 100 mA for blue-green emitting devices [H. Zhong,A. Tyagi, N. N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck,S. P. DenBaars, and S. Nakamura, Electronics Lett. 43, 825 (2007)], over15 mW of power at 100 mA for green-emitting devices [H. Sato, A. Tyagi,H. Zhong, N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S.P. DenBaars, and S. Nakamura, “High power and high efficiency greenlight emitting diode on free-standing semipolar (1122) bulk GaNsubstrate”, Physical Status Solidi-Rapid Research Letters 1, 162 (2007)]and over 15 mW for yellow devices [H. Sato, R. B. Chung, H. Hirasawa, N.Fellows, H. Masui, F. Wu, M. Saito, K. Fujito, J. S. Speck, S. P.DenBaars, and S. Nakamura, “Optical properties of yellow light-emittingdiodes grown on semipolar (1122) bulk GaN substrates,” Applied PhysicsLetters 92, 221110 (2008).]. The UCSB group has shown that the indiumincorporation on semipolar (11-22) GaN is comparable to or greater thanthat of c-plane GaN, which provides further promise for achieving highcrystal quality extended wavelength emitting InGaN layers.

As described by Raring et al. in U.S. Patent Application Ser. No.61/086,139, which is hereby incorporated by reference in its entirety, anon-polar or semi-polar GaN-based LED may be packaged along with atleast one phosphor, producing a package LED that emits at leastpartially polarized light or in some cases polarized light. However,phosphors are often produced as powders, which may lead to scatteredincident light and, typically, reduce any polarization that wasinitially present according to one or more configurations. As aconsequence, even if some of the residual light from the exciting LEDretains some degree of polarization, the light emitted by the phosphormay be approximately unpolarized or polarization may be reduced.

In a specific embodiment, the present invention provides methods anddevices generally configured on semipolar and/or non-polar galliumnitride materials to emit polarized light using transparent phosphorentities. As merely an example, such phosophor entities are described inat least Murota et al. [Jpn. J. Appl. Phys. 41, L887 (2002)], whodisclosed the use of a single crystal of cerium-doped yttrium aluminumgarnet (YAG:Ce) as a phosphor. We believe that the extent of scatteringis greatly reduced with a single crystal, and therefore the lightemitted by the phosphor might be expected to retain some degree orsubstantially all of the polarization characteristic. However, singlecrystals are typically rather expensive relative to powders or ceramicsand are difficult to fabricate into complex shapes, which are overcomein part by one or more embodiments of the present invention. Furtherdetails of the present method and device can be found throughout thepresent specification and more particularly below.

The present inventors have discovered that polarized phosphor emissionmay be achieved by combining a GaN-based LED emitting substantiallypolarized light with at least one sintered, polycrystalline phosphorthat is substantially transparent. Like the single crystal phosphor, thetransparent ceramic phosphor exhibits greatly reduced light scattering,enabling polarized emission. However, the transparent ceramic phosphoris much less expensive than the single crystal and can be fabricated ina much wider range of shapes at low cost. In a preferred embodiment, theceramic phosphor is transparent, with little or no internal lightscattering. In some embodiments, some internal light scattering may bepresent.

In one embodiment, a violet non-polar or semi-polar LED is packagedtogether with at least one transparent ceramic phosphor. In a preferredembodiment, the transparent ceramic phosphor comprises at least threephosphor compositions, emitting in the blue, the green, and the red. Inanother embodiment, a blue non-polar or semi-polar LED is packagedtogether with at least one transparent ceramic phosphor. In a preferredembodiment, the transparent ceramic phosphor comprises at least twophosphor compositions, emitting in the green and the red. In stillanother embodiment, a green or yellow non-polar or semi-polar LED ispackaged together with a blue LED and at least one transparent ceramicphosphor. In a preferred embodiment, the transparent ceramic phosphoremits in the red. In a preferred embodiment, the blue LED constitutes ablue non-polar or semi-polar LED.

A non-polar or semi-polar LED may be fabricated on a bulk galliumnitride substrate. The gallium nitride substrate may be sliced from aboule that was grown by hydride vapor phase epitaxy or ammonothermally,according to methods known in the art. In one specific embodiment, thegallium nitride substrate is fabricated by a combination of hydridevapor phase epitaxy and ammonothermal growth, as disclosed in U.S.Patent Application No. 61/078,704, commonly assigned, and herebyincorporated by reference herein. The boule may be grown in thec-direction, the m-direction, the a-direction, or in a semi-polardirection on a single-crystal seed crystal. The gallium nitridesubstrate may be cut, lapped, polished, and chemical-mechanicallypolished. The gallium nitride substrate orientation may be within ±5degrees, ±2 degrees, ±1 degree, or ±0.5 degrees of the {1 −1 0 0} mplane, the {1 1 −2 0} a plane, the {1 1 −2 2} plane, the {1 1 −2 3}plane, the {1 −1 0 ±1} plane, the {1 −1 0 ±2} plane, or the {1 −1 0 ±3}plane. The gallium nitride substrate may have a dislocation density inthe plane of the large-area surface that is less than 10⁶ cm⁻², lessthan 10⁵ cm⁻², less than 10⁴ cm⁻², or less than 10³ cm⁻². The galliumnitride substrate may have a dislocation density in the c plane that isless than 10⁶ cm⁻², less than 10⁵ cm⁻², less than 10⁴ cm⁻², or less than10³ cm⁻².

A homoepitaxial non-polar or semi-polar LED is fabricated on the galliumnitride substrate according to methods that are known in the art, forexample, following the methods disclosed in U.S. Pat. No. 7,053,413,which is hereby incorporated by reference in its entirety. At least oneAl_(x)In_(y)Ga_(1-x-y)N layer, where 0≤x≤1, 0≤y≤1, and 0<x+y<1, isdeposited on the substrate, for example, following the methods disclosedby U.S. Pat. Nos. 7,338,828 and 7,220,324, which are hereby incorporatedby reference in their entirety. The at least one Al_(x)In_(y)Ga_(1-x-y)Nlayer may be deposited by metal-organic chemical vapor deposition, bymolecular beam epitaxy, by hydride vapor phase epitaxy, or by acombination thereof. In one embodiment, the Al_(x)In_(y)Ga_(1-x-y)Nlayer comprises an active layer or active region that preferentiallyemits light when an electrical current is passed through it. In onespecific embodiment, the active layer comprises a single quantum well,with a thickness between about 0.5 nm and about 40 nm. In a specificembodiment, the active layer comprises a single quantum well with athickness between about 1 nm and about 5 nm. In other embodiments, theactive layer comprises a single quantum well with a thickness betweenabout 5 nm and about 10 nm, between about 10 nm and about 15 nm, betweenabout 15 nm and about 20 nm, between about 20 nm and about 25 nm,between about 25 nm and about 30 nm, between about 30 nm and about 35nm, or between about 35 nm and about 40 nm. In another set ofembodiments, the active layer comprises a multiple quantum well. Instill another embodiment, the active region comprises a doubleheterostructure, with a thickness between about 40 nm and about 500 nm.In one specific embodiment, the active layer comprises anIn_(y)Ga_(1-y)N layer, where 0≤y≤1.

The LED may be flip-chip bonded, for example, as described in U.S.Patent Application Ser. No. 61/102,347, which is hereby incorporated byreference in its entirety according one or more embodiments. Of course,there can be other variations, modifications, and alternatives.

A transparent ceramic phosphor may be fabricated by ceramic processingmethods according to one or more embodiments. At least one ceramicpowder may be provided, along with a doping source, a sintering aid, anda mixing promotor. The ceramic powder may comprise a plurality ofphosphor entities. For example, to synthesize transparent YAG:Ce, Y₂O₃,α-Al₂O₃, and CeO₂ powders may be provided. The powders may be formed byformation of a precursor by a wet chemical method, followed by dryingand calcining The purity of each powder may be greater than 99%, greaterthan 99.9%, greater than 99.99%, or greater than 99.999%. The particlesize of the powders may be between about 1 nm and about 20 micrometers,or between about 100 nanometers and about 5 micrometers. In someembodiments, at least one counter-ion is also provided. For example, inthe case of YAG, Ca and/or Mg, which may be added as CaO, CaCO₃, or MgOpowder, may be added to stabilize the presence of high-oxidation-statedopants in the YAG matrix. The powders may be blended in approximately astoichiometric ratio. The dopant source may be provided at a levelbetween about 0.01 weight percent and about 10 weight percent, orbetween about 0.3 weight percent and about 3 weight percent. The powdersmay be mixed. The mixing may be performed by an operation such as ballmilling or attritor milling. High-purity alumina balls or rods may beprovided as the milling media. In some embodiments, mixing is performedin a liquid carrier such as water, methanol, ethanol, isopropanol,acetone, hexane, or the like. A polymer, such as polyvinyl alcohol (PVA)or polyvinyl butyral (PVB) may be provided as an additional mixingpromoter. An alklylsilane, such as tetraethoxysilane (TEOS) or3-aminopropyl trimethoxysilane (APTMS) may be provided as a sinteringaid, and may be added before or during mixing. The liquid carrier may beremoved by drying the slurry after mixing. In some embodiments, mixedceramic powder is formed directly by formation from precursors. Forexample, YAG precursors may be formed by co-precipitating aqueousY(NO₃)₃ and Al(NO₃)₃ with ammonium hydrogen carbonate, followed bywashing with ultrapure water and drying. In other embodiments,precursors are formed by preparing a chloride solution comprising thedesired cations in the appropriate relative concentrations, formingprecipitates by mixing with a solution such as ammonium oxalate orammonium hydroxide, collecting the powder by sedimentation orfiltration, drying, and heating a thermal decomposition temperaturebetween about 600 degrees Celsius and about 1000 degrees Celsius. Thedried ceramic powder may be ground and sieved. Disaggregation of thepowder particles may be achieved by jet milling. The ceramic powders maybe formed into a shaped green body by at least one of uniaxial pressingin a die, isostatic pressing, drying in a mold, and slip casting. A moldmay comprise gypsum.

The ceramic green body may be sintered to transparency, forming a shapedtransparent ceramic phosphor entity. For example, a transparent YAGceramic may be obtained by sintering in vacuum, in air, or in anoxygen-containing atmosphere at temperatures between about 1400 degreesCelsius and about 1800 degrees Celsius for a predetermined time betweenabout one hour and about 100 hours. In other embodiments, sintering isperformed in an atmosphere comprising at least one of water vapor,ammonia, halogen, or a hydrogen halide. In some embodiments, sinteringis initially performed at a higher, first temperature, followed byannealing at a second, lower temperature. For example, YAG may besintered at a temperature of about 1750 degrees Celsius in oxygen or invacuum for 5-20 hours, followed by annealing at approximately 1400degrees Celsius for 5-20 hours in oxygen. The sintering may be performedin vacuum, at ambient pressure, or at elevated pressure. In someembodiments, sintering is performed by hot isostatic pressing. Aftersintering, the transparent ceramic phosphor may have a density greaterthan about 99.9% of the theoretical density.

After sintering, the grain size of the transparent ceramic phosphor maybe between about 1 nanometer and about 200 micrometers, or between about1 micrometer and about 40 micrometers. After sintering, at least onesurface of the transparent ceramic phosphor may be ground and/orpolished by methods that are known in the art. Polishing may comprisemechanical, chemical, and chemical-mechanical methods. Mechanicalpolishing may comprise lapping. Chemical polishing may comprise heatingin an acid, such as at least one of phosphoric acid, sulfuric acid,hydrochloric acid, nitric acid, perchloric acid, hydrofluoric acid, oraqua regia. Chemical polishing may comprise heating in a base, such assodium hydroxide or sodium amide. Chemical polishing may compriseheating in a molten flux, such as a metal halide, a metal nitrate, ametal fluoroborate, a metal nitride, a metal amide, a metal oxide, or amixture or compound thereof. Chemical mechanical polishing may compriseabrasion using a slurry comprising an abrasive particle and a liquidcarrier with a pH between about 1 and about 6.5 or between about 7.5 andabout 12. The abrasive particle in the chemical mechanical polishingslurry may comprise alumina or silica. The polishing may provide amirror finish. At least one coating may be applied to at least onesurface of the transparent ceramic phosphor. The coating may have arefractive index that is intermediate between that of air and of thetransparent ceramic phosphor, or that is intermediate between that ofthe transparent ceramic phosphor and the gallium nitride substrate, orat least one of the AlInGaN layers provided on the gallium nitridesubstrate.

In some embodiments, the composition of the transparent ceramic phosphoris approximately constant through the thickness of the phosphor. Inother embodiments, the transparent phosphor has a laminate structure, inwhich the composition varies through the thickness of the phosphor. Alaminate structure may be formed by sequential layering ceramic powderof varying compositions. The laminate structure may be formed bysequential uniaxial pressing of ceramic powders. The laminate structuremay be formed by sequential slip casting of ceramic powders of varyingcompositions.

In some embodiments, at least one transparent ceramic phosphor comprisesan oxide. In other embodiments, at least one transparent ceramicphosphor comprises a nitride. In still other embodiments, at least onetransparent ceramic phosphor comprises an oxynitride, a halide, anoxyhalide, or an oxyhalidenitride.

In a specific embodiment, the present invention provides packages anddevices including at least one non-polar or at least one semi-polarhomoepitaxial LED placed on a substrate or submount. The at least onenonpolar or at least one semi-polar homoepitaxial LED may be mountedactive-layer-up or may be flip-chip bonded, according to methods thatare known in the art. In one specific embodiment, much of the bulksubstrate is removed and the LED is flip-chip bonded, as described inU.S. Patent Application Ser. No. 61/102,347, which is herebyincorporated by reference in its entirety. The present packages anddevices are combined with transparent or translucent ceramic phosphorentities to discharge white light according to a specific embodiment.Further details of the present packages and methods can be foundthroughout the present specification and more particularly below.

FIG. 1 is a simplified diagram of a nonpolar or semi-polar LED coupledto a transparent phosphor. An optical coupling layer is placed on atleast one surface of a nonpolar or semipolar LED. The optical couplinglayer may comprise at least one of an epoxy, a silicone, a glass, oranother material that is substantially transparent at the emissionwavelength of the LED and is liquid or has a glass transitiontemperature less than about 500 degrees Celsius. The refractive index ofthe optical coupling layer may be between 1.0 and 2.5, between 1.2 and2.0, or between 1.3 and 1.9. A transparent phosphor is placed in directcontact with the optical coupling layer. In an alternate embodiment, anoptical coupling layer is placed on at least one surface of atransparent phosphor. In preferred embodiments, substantially nobubbles, dust, or other materials that might scatter light are presentwithin the optical coupling layer or its interfaces with the LED or thetransparent phosphor. In some embodiments, a thin film of the opticalcoupling layer material is applied to at least one surface of the LEDand at least one surface of the transparent phosphor and then the twooptical coupling layers are placed in contact with one another. Inpreferred embodiments, the optical coupling layer may be cured at anelevated temperature between about 30 degrees Celsius and about 200degrees Celsius, between about 80 degrees Celsius and about 160 degreesCelsius, or between about 120 degrees Celsius and about 150 degreesCelsius, for a duration between about 1 minute and about 1000 minutes.In alternate embodiments, the optical coupling layer may be subjected toa multi-step cure process at multiple elevated temperatures. Acontrolled ambient environment may be applied during the cure step. Insome embodiments, the bonding surfaces may be subjected to a cleaningstep using a solvent, a dilute acid or base, an oxygen plasma or a UVozone treatment, prior to the application of the optical coupling layer.In some embodiments, a transparent phosphor may be attached at least onesurface of an LED device using a manual attach process, using asemi-automated attach process, or a fully automated attach process. Oneor more fiducials or other distinguishing markings or features may beprovided on the LED surface, on the substrate to which the LED isattached, or on the package in which the LED is placed, in order toenable appropriate alignment of the transparent phosphor to the LED. Inan alternative embodiment, the transparent phosphor may be attached toat least one surface of the LED without the aid of an optical couplinglayer. This may be achieved using a method such as wafer fusion.

In some embodiments, the lateral dimensions of the transparent phosphormay be smaller than those of the LED to which it is attached. In aalternative embodiment, the lateral dimensions of the transparentphosphor may be exactly equal to those of the LED to which it isattached. In a preferred embodiment, the lateral dimensions of thetransparent phosphor may be slightly larger than those of the LED towhich it is attached. In an alternative preferred embodiment, thelateral dimensions of the transparent phosphor may be significantlylarger than those of the LED to which it is attached. In specificembodiments, the ratio of the lateral dimensions of the transparentphosphor and the LED to which it is attached may be 1.1, 1.2, 1.3, 1.4or 1.5. In other embodiments, the ratio of the lateral dimensions of thetransparent phosphor and the LED to which it is attached may be greaterthan 1.5.

In some embodiments, as shown schematically in FIG. 31, two or moretransparent phosphor entities may be optically coupled to a single lightemitting device. An optical coupling layer may be provided between afirst transparent phosphor and a second transparent phosphor. Additionaloptical coupling layers may be provided for third, fourth, fifth, ormore transparent phosphor entities.

In some embodiments, as shown in FIG. 1, the surface of the transparentphosphor opposite the LED is substantially parallel to the surface ofthe LED. In other embodiments, as shown in FIG. 2, the surface of thetransparent phosphor opposite the LED is oriented with a significantwedge angle with respect to the surface of the LED. In a preferredembodiment, the surface of the transparent phosphor opposite the LED isoriented with an angle with respect to the surface of the LED that isapproximately equal to the Brewster angle for light emerging from thetransparent phosphor into air or into the encapsulant material overlyingthe transparent phosphor. In some embodiments, the refractive index ofthe transparent phosphor is chosen to be equal to or substantially equalto the square root of the product of the refractive index of the galliumnitride substrate or at least one AlInGaN layer provided on the galliumnitride substrate, and the refractive index of air or encapsulantmaterial overlying the transparent phosphor. In an alternativeembodiment, the surface of the transparent phosphor opposite the LED isoriented with an angle with respect to the surface of the LED that issmaller than the angle of total internal reflection for the interfacebetween the transparent phosphor and air or encapsulant materialoverlying the transparent phosphor. In still other embodiments, as shownin FIG. 3, the surface of the transparent phosphor opposite the LED hasa sawtooth or other similar one-dimensional grating pattern. In apreferred embodiment, the wedge angle of each sawtooth pattern isapproximately equal to the Brewster angle for the light emerging fromthe transparent phosphor into air or into the encapsulant materialoverlying the transparent phosphor. In an alternative embodiment, thewedge angle of each sawtooth pattern is less than the angle of totalinternal reflection for the interface between the transparent phosphorand air or encapsulant material overlying the transparent phosphor. Insome embodiments the lateral period (unit cell) of the sawtooth patternis between 1 nm and 1000 nm. In a preferred embodiment, the lateralperiod of the sawtooth pattern is between about 1 micron and about 100microns. In another preferred embodiment, the lateral period of thesawtooth pattern is between about 100 microns and about 1000 microns. Inyet other embodiments, as shown in FIG. 4, the surface of thetransparent phosphor opposite the LED has a microlens pattern. The shapeof the individual microlenses pattern may be designed using a numericalsimulation, raytracing or similar method, in order to maximize theextraction of light from the transparent phosphor and LED. In stillother embodiments, as shown in FIG. 5, the surface of the transparentphosphor opposite the LED forms a dome. The shape of the dome may bedesigned using a numerical simulation, ray-tracing or similar method, inorder to maximize the extraction of light and/or the polarization of thelight emitted from the transparent phosphor and LED. In a preferredembodiment, the wedge, sawtooth pattern, microlens pattern or dome isformed during the fabrication of the transparent phosphor using a mold.In an alternative embodiment, the wedge may be formed using a lappingand polishing step following the fabrication of the transparentphosphor. In yet another alternative embodiment, the sawtooth pattern,microlens pattern or dome may be formed using a lithography stepfollowed by a dry-etch or wet-etch process, following the fabrication ofthe transparent phosphor.

In some embodiments, as shown schematically in FIG. 32, at least onesurface of a light emitting device is patterned or textured. In onespecific embodiment, the surface of the light emitting device facing thetransparent phosphor entity is patterned with a sawtooth pattern. Thesurface of the transparent phosphor entity facing the light emittingdevice may have a similar sawtooth pattern, so that the surfaces may bepositioned in close proximity to one another, with an optical couplinglayer between them. The surface of the transparent phosphor opposite theLED may be planar or may comprise a wedge, a sawtooth pattern, amicrolens, or a dome. The shapes of the outward facing surface of theLED and of the inward and outward facing surfaces of one or moretransparent phosphor entities optically coupled to the LED may bedesigned using a numerical simulation, ray-tracing or similar method, inorder to maximize the extraction of light and/or the polarization of thelight emitted from the transparent phosphor and LED.

FIG. 6 is a simplified diagram of a packaged light emitting device 600using a recessed configuration according to an embodiment of the presentinvention. This diagram is merely an illustration and should not undulylimit the scope of the claims herein. One of ordinary skill in the artwould recognize other variations, modifications, and alternatives. In aspecific embodiment, the present invention provides a packaged lightemitting device 600. As shown, the device has a substrate membercomprising a surface region. In a specific embodiment, the substrate ismade of a suitable material such a metal including, but not limited to,Alloy 42, copper, and others, among plastics, dielectrics, epoxies andthe like. In a specific embodiment, the substrate is generally from alead frame member such as metal alloy, but can be others. In a specificembodiment, the substrate is made of a ceramic material such as aluminaor aluminum nitride. Other ceramic materials may also be used assubstrates. In a specific embodiment, the substrate may be comprised ofa hybrid between a metal and a second material. In a specificembodiment, the substrate may be comprised of a hybrid between a metaland a second and third material. The second and third materials may becomprised of one or more metal, ceramic, plastic, dielectric or epoxymaterial and the like. In yet another specific embodiment, the substratemay have a multi-layer structure, wherein the individual layers may becomprised of one or more metals or ceramic, plastic, dielectric andepoxy materials.

In a specific embodiment, the present substrate, which holds the LED,can come in various shapes, sizes, and configurations. In a specificembodiment, the surface region of substrate 101 is cupped.Alternatively, the surface region 601 is recessed according to aspecific embodiment. Additionally, the surface region generallycomprises a smooth surface, plating, or coating. Such plating or coatingcan be gold, silver, platinum, aluminum, or any pure or alloy ormulti-layer material, which is suitable for bonding to an overlyingsemiconductor material, but can be others. Of course, there can be othervariations, modifications, and alternatives.

Referring again to FIG. 6, the device has at least one light emittingdiode device overlying the surface region. At least one of the lightemitting diode devices 603 is fabricated on a semipolar or nonpolar GaNcontaining substrate. In a specific embodiment, the device emitspolarized electromagnetic radiation 605. As shown, the light emittingdevice is coupled to a first potential, which is attached to thesubstrate, and a second potential 609, which is coupled to wire or lead611 bonded to a light emitting diode. Of course, there can be othervariations, modifications, and alternatives.

In a specific embodiment, the device has at least one of the lightemitting diode devices comprising a quantum well region. In a specificembodiment, the quantum well region is characterized by an electron wavefunction and a hole wave function. The electron wave function and thehole wave function are substantially overlapped within a predeterminedspatial region of the quantum well region according to a specificembodiment. Of course, there can be other variations, modifications, andalternatives.

In a preferred embodiment, the at least one light emitting diode devicecomprises a blue LED device. In a specific embodiment, the substantiallypolarized emission is blue light. The at least one light emitting diodedevice comprises a blue LED device capable of emitting electromagneticradiation at a range from about 430 nanometers to about 490 nanometers,which is substantially polarized emission being blue light. In aspecific embodiment, a {1 −1 0 0} m-plane bulk substrate is provided forthe nonpolar blue LED. The substrate has a flat surface, with aroot-mean-square (RMS) roughness of about 0.1 nm, a threadingdislocation density less than 5×10⁶ cm⁻², and a carrier concentration ofabout 1×10¹⁷ cm⁻³. Epitaxial layers are deposited on the substrate bymetalorganic chemical vapor deposition (MOCVD) at atmospheric pressure.The ratio of the flow rate of the group V precursor (ammonia) to that ofthe group III precursor (trimethyl gallium, trimethyl indium, trimethylaluminum) during growth is between about 3000 and about 12000. First, acontact layer of n-type (silicon-doped) GaN is deposited on thesubstrate, with a thickness of about 5 microns and a doping level ofabout 2×10¹⁸ cm⁻³. Next, an undoped InGaN/GaN multiple quantum well(MQW) is deposited as the active layer. The MQW superlattice has sixperiods, comprising alternating layers of 8 nm of InGaN and 37.5 nm ofGaN as the barrier layers. Next, a 10 nm undoped AlGaN electron blockinglayer is deposited. Finally, a p-type GaN contact layer is deposited,with a thickness of about 200 nm and a hole concentration of about7×10¹⁷ cm⁻³. Indium tin oxide (ITO) is e-beam evaporated onto the p-typecontact layer as the p-type contact and rapid-thermal-annealed. LEDmesas, with a size of about 300×300 μm², are formed by photolithographyand dry etching using a chlorine-based inductively-coupled plasma (ICP)technique. Ti/Al/Ni/Au is e-beam evaporated onto the exposed n-GaN layerto form the n-type contact, Ti/Au is e-beam evaporated onto a portion ofthe ITO layer to form a p-contact pad, and the wafer is diced intodiscrete LED dies. Electrical contacts are formed by conventional wirebonding. Of course, there can be other variations, modifications, andalternatives.

In a specific embodiment, the present device also has a thickness of oneor more entities comprising a transparent phosphor overlying the atleast one light emitting diode device. In a specific embodiment, the oneor more entities are excited by the substantially polarized emission andemit substantially polarized electromagnetic radiation of one or moresecond wavelengths. In a preferred embodiment, the plurality of entitiesis capable of emitting substantially polarized yellow light from aninteraction with the substantially polarized emission of blue light. Ina specific embodiment, the thickness of the plurality of entities, whichare phosphor entities, is less than about 1 millimeter, less than about0.3 millimeter, less than about 0.1 millimeter, or less than about 10micrometers. Of course, there can be other variations, modifications,and alternatives.

In a specific embodiment, the one or more entities comprises a phosphoror phosphor blend selected from one or more of (Y, Gd, Tb, Sc, Lu,La)₃(Al, Ga, In)₅O₁₂:Ce³⁺, SrGa₂S₄:Eu²⁺, and SrS:Eu²⁺. In otherembodiments, the device may include a phosphor capable of emittingsubstantially red light. Such phosphor may be selected from one or moreof (Gd,Y,Lu,La)₂O₃:Eu³⁺,Bi³⁺; (Gd,Y,Lu,La)₂O₂S:Eu³⁺,Bi³⁺;(Gd,Y,Lu,La)VO₄:Eu³⁺,Bi³⁺; Y₂(O,S)₃:Eu³⁺; Ca_(1-x)Mo_(1-y)Si_(y)O₄:,where 0.05≤x≤0.5, 0≤y≤0.1; (Li,Na,K)₅Eu(W,Mo)O₄; (Ca,Sr)S:Eu²⁺;SrY₂S₄:Eu²⁺; CaLa₂S₄:Ce³⁺; (Ca,Sr)S:Eu²⁺; 3.5MgO*0.5MgF₂*GeO₂:Mn⁴⁺(MFG); (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺,Mn²⁺; (Y,Lu)₂WO₆:Eu³⁺,Mo⁶⁺;(Ba,Sr,Ca)₃Mg_(x)Si₂O₈:Eu²⁺,Mn²⁺, wherein 1≤x≤2;(RE_(1-y)Ce_(y))Mg_(2-x)Li_(x)Si_(3-x)P_(x)O₁₂, where RE is at least oneof Sc, Lu, Gd, Y, and Tb, 0.0001<x<0.1 and 0.001<y<0.1; (Y, Gd, Lu,La)_(2-x)Eu_(x)W_(1-y)Mo_(y)O₆,where 0.5≤x≤1.0, 0.01≤y≤1.0;(SrCa)_(1-x)Eu_(x)Si₅N₈, where 0.01≤x≤0.3; SrZnO₂:Sm⁺³; M_(m)O_(n)Xwherein M is selected from the group of Sc, Y, a lanthanide, an alkaliearth metal and mixtures thereof; X is a halogen; 1≤m≤3; and 1≤n≤4, andwherein the lanthanide doping level can range from 0.1 to 40% spectralweight; and Eu³⁺ activated phosphate or borate phosphors; and mixturesthereof.

In one specific embodiment, the phosphor comprisesR_(3-x−y-z+w2)M_(z)A_(1.5x+y−w2)Si_(6-w1−w2)Al_(w1+w2)O_(y+w1)N_(11-y−w1),where R represents La, Gd, Lu, Y and/or Sc; M represents Ce, Eu, Mn, Yb,Pr and/or Tb; A represents Ba, Sr, Ca, Mg and/or Zn; and x, y, z, w1 andw2 each represents a number satisfying the following relations:(1/7)≤(3-x-y-z+w2)/6<(1/2), 0<(1.5x+y−w2)/6<(9/2), 0<x<3, 0≤y<2, 0<z<1,0≤w1≤5, 0≤w2≤5, and 0≤w1+w2≤5. In another embodiment, the phosphorcomprises Sr_(10-x−y-z)M_(x)Eu_(y)Mn_(z))(PO₄)₆(Cl_(1-a)Q_(a))₂, where Mrepresents at least one element selected from the group consisting ofBa, Ca, Mg and Zn; Q represents at least one element selected from thegroup consisting of F, Br and I; and x, y, z and a satisfy the followingrelations: 0≤x≤10, 0.3≤y≤1.5, 0≤z≤3, 0≤a≤1 and x+y+z≤10. In otherembodiments, the phosphor comprises M¹ _(x)Ba_(y)M² _(z)L_(u)O_(v)N_(w)(In the formula, M¹ represents at least one activator element selectedfrom the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tmand Yb; M² represents at least one divalent metal element selected fromthe group consisting of Sr, Ca, Mg and Zn; L represents a metal elementselected from group 4 or group 14 metal elements of the periodic table;and 0.00001≤x≤3, 0≤y≤2.99999, 2.6<x+y+z<3, 0<u≤11, 6<v≤25, and 0<w≤17.Of course, there can be other variations, modifications, andalternatives.

In a specific embodiment, the at least one light emitting diode devicecomprises at least a violet LED device capable of emittingelectromagnetic radiation at a range from about 380 nanometers to about440 nanometers and the one or more entities are capable of emittingsubstantially white light, the substantially polarized emission beingviolet light. In a specific embodiment, a (1 −1 0 0) m-plane bulksubstrate is provided for the nonpolar violet LED. The substrate has aflat surface, with a root-mean-square (RMS) roughness of about 0.1 nm, athreading dislocation density less than 5×10⁶ cm⁻², and a carrierconcentration of about 1×10¹⁷ cm⁻³. Epitaxial layers are deposited onthe substrate by metalorganic chemical vapor deposition (MOCVD) atatmospheric pressure. The ratio of the flow rate of the group Vprecursor (ammonia) to that of the group III precursor (trimethylgallium, trimethyl indium, trimethyl aluminum) during growth is betweenabout 3000 and about 12000. First, a contact layer of n-type(silicon-doped) GaN is deposited on the substrate, with a thickness ofabout 5 microns and a doping level of about 2×10¹⁸ cm⁻³. Next, anundoped InGaN/GaN multiple quantum well (MQW) is deposited as the activelayer. The MQW superlattice has six periods, comprising alternatinglayers of 16 nm of InGaN and 18 nm of GaN as the barrier layers. Next, a10 nm undoped AlGaN electron blocking layer is deposited. Finally, ap-type GaN contact layer is deposited, with a thickness of about 160 nmand a hole concentration of about 7×10¹⁷ cm⁻³. Indium tin oxide (ITO) ise-beam evaporated onto the p-type contact layer as the p-type contactand rapid-thermal-annealed. LED mesas, with a size of about 300×300 μm²,are formed by photolithography and dry etching. Ti/Al/Ni/Au is e-beamevaporated onto the exposed n-GaN layer to form the n-type contact,Ti/Au is e-beam evaporated onto a portion of the ITO layer to form acontact pad, and the wafer is diced into discrete LED dies. Electricalcontacts are formed by conventional wire bonding.

Other colored LEDs may also be used or combined according to a specificembodiment. Of course, there can be other variations, modifications, andalternatives.

In a specific embodiment, a (1 1 −2 2} bulk substrate is provided for asemipolar green LED. The substrate has a flat surface, with aroot-mean-square (RMS) roughness of about 0.1 nm, a threadingdislocation density less than 5×10⁶ cm⁻², and a carrier concentration ofabout 1×10¹⁷ cm⁻³. Epitaxial layers are deposited on the substrate bymetalorganic chemical vapor deposition (MOCVD) at atmospheric pressure.The ratio of the flow rate of the group V precursor (ammonia) to that ofthe group III precursor (trimethyl gallium, trimethyl indium, trimethylaluminum) during growth between about 3000 and about 12000. First, acontact layer of n-type (silicon-doped) GaN is deposited on thesubstrate, with a thickness of about 1 micron and a doping level ofabout 2×10¹⁸ cm⁻³. Next, an InGaN/GaN multiple quantum well (MQW) isdeposited as the active layer. The MQW superlattice has six periods,comprising alternating layers of 4 nm of InGaN and 20 nm of Si-doped GaNas the barrier layers and ending with an undoped 16 nm GaN barrier layerand a 10 nm undoped Al_(0.15)Ga_(0.85)N electron blocking layer.Finally, a p-type GaN contact layer is deposited, with a thickness ofabout 200 nm and a hole concentration of about 7×10¹⁷ cm⁻³. Indium tinoxide (ITO) is e-beam evaporated onto the p-type contact layer as thep-type contact and rapid-thermal-annealed. LED mesas, with a size ofabout 200×550 μm², are formed by photolithography and dry etching.Ti/Al/Ni/Au is e-beam evaporated onto the exposed n-GaN layer to formthe n-type contact, Ti/Au is e-beam evaporated onto a portion of the ITOlayer to form a contact pad, and the wafer is diced into discrete LEDdies. Electrical contacts are formed by conventional wire bonding.

In another specific embodiment, a (1 1 −2 2} bulk substrate is providedfor a semipolar yellow LED. The substrate has a flat surface, with aroot-mean-square (RMS) roughness of about 0.1 nm, a threadingdislocation density less than 5×10⁶ cm⁻², and a carrier concentration ofabout 1×10¹⁷ cm⁻³. Epitaxial layers are deposited on the substrate bymetalorganic chemical vapor deposition (MOCVD) at atmospheric pressure.The ratio of the flow rate of the group V precursor (ammonia) to that ofthe group III precursor (trimethyl gallium, trimethyl indium, trimethylaluminum) during growth between about 3000 and about 12000. First, acontact layer of n-type (silicon-doped) GaN is deposited on thesubstrate, with a thickness of about 2 microns and a doping level ofabout 2×10¹⁸ cm⁻³. Next, a single quantum well (SQW) is deposited as theactive layer. The SQW comprises a 3.5 nm InGaN layer and is terminatedby an undoped 16 nm GaN barrier layer and a 7 nm undopedAl_(0.15)Ga_(0.85)N electron blocking layer. Finally, a Mg-doped p-typeGaN contact layer is deposited, with a thickness of about 200 nm and ahole concentration of about 7×10¹⁷ cm⁻³. Indium tin oxide (ITO) ise-beam evaporated onto the p-type contact layer as the p-type contactand rapid-thermal-annealed. LED mesas, with a size of about 600×450 μm²,are formed by photolithography and dry etching. Ti/Al/Ni/Au is e-beamevaporated onto the exposed n-GaN layer to form the n-type contact,Ti/Au is e-beam evaporated onto a portion of the ITO layer to form acontact pad, and the wafer is diced into discrete LED dies. Electricalcontacts are formed by conventional wire bonding.

In a specific embodiment, the one or more entities comprise a blend ofphosphors capable of emitting substantially blue light, substantiallygreen light, and substantially red light. As an example, the blueemitting phosphor may be selected from the group consisting of(Ba,Sr,Ca)₅(PO₄)₃(Cl,F,Br,OH):Eu²⁺,Mn²⁺; Sb³⁺,(Ba,Sr,Ca)MgAl₁₀O₁₇:Eu²⁺,Mn²⁺; (Ba,Sr,Ca)BPO₅:Eu²⁺,Mn²⁺; (Sr,Ca)₁₀(PO₄)₆*nB₂O₃:Eu²⁺;2SrO*0.84P₂O₅*0.16B₂O₃:Eu^(2+; Sr) ₂Si₃O₈*2SrCl₂:Eu²⁺;(Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺,Mn²⁺; Sr₄Al₁₄O₂₅:Eu²⁺ (SAE); BaAl₈O₁₃:Eu²⁺;and mixtures thereof. As an example, the green phosphor may be selectedfrom the group consisting of (Ba,Sr,Ca)MgAl₁₀O₁₇:Eu^(2°), Mn²⁺ (BAMn);(Ba,Sr,Ca)Al₂O₄:Eu²⁺; (Y,Gd,Lu,Sc,La)BO₃:Ce³⁺,Tb³⁺;Ca₈Mg(SiO₄)₄Cl₂:Eu²⁺,Mn²⁺; (Ba,Sr,Ca)₂SiO₄:Eu²⁺;(Ba,Sr,Ca)₂(Mg,Zn)Si₂O₇:Eu²⁺; (Sr,Ca,Ba)(Al,Ga,In)₂S₄:Eu²⁺;(Y,Gd,Tb,La,Sm,Pr,Lu)₃(Al,Ga)₅O₁₂:Ce³⁺;(Ca,Sr)₈(Mg,Zn)(SiO₄)₄C₁₂:Eu²⁺,Mn²⁺ (CASI); Na₂Gd₂B₂O₇:Ce³⁺,Tb³⁺;(Ba,Sr)₂(Ca,Mg,Zn)B₂O₆:K,Ce,Tb; and mixtures thereof. As an example, thered phosphor may be selected from the group consisting of(Gd,Y,Lu,La)₂O₃:Eu³⁺,Bi³⁺; (Gd,Y,Lu,La)₂O₂S:Eu³⁺,Bi³⁺;(Gd,Y,Lu,La)VO₄:Eu³⁺,Bi³⁺; Y₂(O,S)₃:Eu³⁺; Ca_(1-x)Mo_(1-y)Si_(y)O₄:,where 0.05≤x≤0.5, 0≤y≤0.1; (Li,Na,K)₅Eu(W,Mo)O₄; (Ca,Sr)S: Eu²⁺;SrY₂S₄:Eu²⁺: CaLa₂S₄:Ce³⁺; (Ca,Sr)S:Eu²⁺; 3.5MgO*0.5MgF₂*GeO₂:Mn⁴⁺(MFG); (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺,Mn²⁺; (Y,Lu)₂WO₆:Eu³⁺,Mo⁶⁺;(Ba,Sr,Ca)₃Mg_(x)Si₂O₈:Eu²⁺,Mn²⁺, wherein 1≤x≤2;(RE_(1-y)Ce_(y))Mg_(2-x)Li_(x)Si_(3-x)P_(x)O₁₂, where RE is at least oneof Sc, Lu, Gd, Y, and Tb, 0.0001<x<0.1 and 0.001<y<0.1; (Y, Gd, Lu,La)_(2-x)Eu_(x)W_(1-y)Mo_(y)O₆,where 0.5≤x≤1.0, 0.01≤y≤1.0;(SrCa)_(1-x)Eu_(x)Si₅N₈, where 0.01≤x≤0.3; SrZnO₂:Sm⁺³; M_(m)O_(n)X,wherein M is selected from the group of Sc, Y, a lanthanide, an alkaliearth metal and mixtures thereof; X is a halogen; 1≤m≤3; and 1≤n≤4, andwherein the lanthanide doping level can range from 0.1 to 40% spectralweight; and Eu³⁺ activated phosphate or borate phosphors; and mixturesthereof.

In a specific embodiment, the present packaged device includes anenclosure 617. The enclosure can be made of a suitable material such asan optically transparent plastic, glass, epoxy, silicone or othermaterial. As also shown, the enclosure has a suitable shape according toa specific embodiment. The shape can be annular, circular, egg-shaped,trapezoidal, or any combination of these shapes. Depending upon theembodiment, the enclosure with suitable shape and material is configuredto facilitate and even optimize transmission of electromagneticradiation from the LED device with coating through the surface region ofthe enclosure. Of course, there can be other variations, modifications,and alternatives.

FIGS. 7 through 10 illustrate a simplified method of assembling thelight emitting device of FIG. 6 according to an embodiment of thepresent invention. These diagrams are merely illustrations and shouldnot unduly limit the scope of the claims herein. One of ordinary skillin the art would recognize other variations, modifications, andalternatives. Also shown is a method for assembling an LED deviceaccording to an embodiment of the present invention. The method includesproviding a substrate member 601 comprising a surface region. In aspecific embodiment, the substrate is made of a suitable material such ametal including, but not limited to, Alloy 42, copper, dielectrics,plastics, or others. In a specific embodiment, the substrate isgenerally from a lead frame member such as a metal alloy, but can beothers.

In a specific embodiment, the present substrate, which holds the LED,can come in various shapes, sizes, and configurations. In a specificembodiment, the surface region of substrate 601 is cupped.Alternatively, the surface region of substrate 601 is recessed accordingto a specific embodiment. Additionally, the surface region is generallya smooth surface, plating, or coating. Such plating or coating can begold, silver, platinum, aluminum, or any pure or alloy material, whichis suitable for bonding to an overlying semiconductor material, but canbe others. Of course, there can be other variations, modifications, andalternatives.

In a specific embodiment, the method includes providing at least onelight emitting diode device overlying the surface region. At least oneof the light emitting diode devices 603 is fabricated on a semipolar ornonpolar GaN containing substrate. In a specific embodiment, the deviceemits polarized electromagnetic radiation 605. As shown, the lightemitting device is coupled to a first potential, which is attached tothe substrate, and a second potential 609, which is coupled to wire orlead 611 bonded to a light emitting diode. Of course, there can be othervariations, modifications, and alternatives.

In a preferred embodiment, the at least one light emitting diode devicecomprises a blue LED device. In a specific embodiment, the substantiallypolarized emission is blue light. The at least one light emitting diodedevice comprises a blue LED device capable of emitting electromagneticradiation at a range from about 430 nanometers to about 490 nanometers,which is substantially polarized emission being blue light.

In a specific embodiment, the LED device is attached onto the surfaceregion of the substrate. The attachment occurs by silver paste, solderpaste (SAC305), eutectic, AuSn eutectic, or other suitable techniques.In a preferred embodiment, the LED device is attached using die attachmethods such as eutectic bonding of metals such as gold, silver, tin,copper or platinum, or alloys thereof, among others. Of course, therecan be other variations, modifications, and alternatives.

Referring now to FIG. 8, the present method includes bonding wiring 115from lead 109 to a bonding pad on the LED device. In a specificembodiment, the wire is a suitable material such as gold, aluminum, orothers. In a specific embodiment, wire bonding uses techniques such asultrasonic, megasonic, or others. Of course, there can be othervariations, modifications, and alternatives.

Referring now to FIG. 9, the method includes providing a thickness 115of one or more entities comprising a transparent phosphor overlying theat least one light emitting diode device. In a specific embodiment, theone or more entities are excited by the substantially polarized emissionand emit electromagnetic radiation of one or more second wavelengths. Ina preferred embodiment, the plurality of entities is capable of emittingsubstantially yellow light from an interaction with the substantiallypolarized emission of blue light. In a specific embodiment, thethickness of the plurality of entities, which are phosphor entities, isless than about 1 millimeter, less than about 0.3 millimeter, less thanabout 0.1 millimeter, or less than about 10 micrometers. Of course,there can be other variations, modifications, and alternatives.

In a specific embodiment, the one or more entities comprises a phosphoror phosphor blend selected from one or more of (Y, Gd, Tb, Sc, Lu,La)₃(Al, Ga, In)₅O₁₂:Ce³⁺, SrGa₂S₄:Eu²⁺, and SrS:Eu²⁺. In otherembodiments, the device may include a phosphor capable of emittingsubstantially red light. Such phosphor may be selected from(Gd,Y,Lu,La)₂O₃:Eu³⁺,Bi³⁺; (Gd,Y,Lu,La)₂O₂S:Eu³⁺,Bi³⁺;(Gd,Y,Lu,La)VO₄:Eu³⁺,Bi³⁺; Y₂(O,S)₃:Eu³⁺; Ca_(1-x)Mo_(1-y)SiO₄:, where0.05≤x≤0.5, 0≤y≤0.1; (Li,Na,K)₅Eu(W,Mo)O₄; (Ca,Sr)S:Eu²⁺; SrY₂S₄:Eu²⁺;CaLa₂S₄:Ce³⁺; (Ca,Sr)S:Eu²⁺; 3.5MgO*0.5MgF₂*GeO₂:Mn⁴⁺ (MFG); (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺,Mn²⁺; (Y,Lu)₂WO₆:Eu³⁺,Mo⁶⁺;(Ba,Sr,Ca)₃Mg_(x)Si₂O₈:Eu²⁺,Mn²⁺, wherein 1≤x≤2;(RE_(1-y)Ce_(y))Mg_(2-x)Li_(x)Si_(3-x)P_(x)O₁₂, where RE is at least oneof Sc, Lu, Gd, Y, and Tb, 0.0001<x<0.1 and 0.001<y<0.1; (Y, Gd, Lu,La)_(2-x)Eu_(x)W_(1-y)Mo_(y)O₆,where 0.5≤x≤1.0, 0.01≤y≤1.0;(SrCa)_(1-x)Eu_(x)Si₅N₈, where 0.01≤x≤0.3; SrZnO₂:Sm⁺³; M_(m)O_(n)Xwherein M is selected from the group of Sc, Y, a lanthanide, an alkaliearth metal and mixtures thereof; X is a halogen; 1≤m≤3; and 1≤n≤4, andwherein the lanthanide doping level can range from 0.1 to 40% spectralweight; and Eu³⁺ activated phosphate or borate phosphors; and mixturesthereof. Of course, there can be other variations, modifications, andalternatives.

In a specific embodiment, the one or more entities comprise a blend ofphosphors capable of emitting substantially blue light, substantiallygreen light, and substantially red light. As an example, the blueemitting phosphor may be selected from the group consisting of(Ba,Sr,Ca)₅(PO₄)₃(Cl,F,Br,OH):Eu²⁺,Mn²⁺; Sb³⁺,(Ba,Sr,Ca)MgAl₁₀O₁₇:Eu²⁺,Mn²⁺; (Ba,Sr,Ca)BPO₅:Eu²⁺,Mn²⁺; (Sr,Ca)₁₀(PO₄)₆*nB₂O₃:Eu²⁺;2SrO*0.84P₂O₅*0.16B₂O₃:Eu²⁺; Sr₂Si₃O₈*2SrCl₂:Eu²⁺;(Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺,Mn²⁺; Sr₄Al₁₄O₂₅:Eu²⁺ (SAE); BaAl₈O₁₃:Eu²⁺;and mixtures thereof. As an example, the green phosphor may be selectedfrom the group consisting of (Ba,Sr,Ca)MgAl₁₀O₁₇:Eu²⁺, Mn²⁺ (BAMn);(Ba,Sr,Ca)Al₂O₄:Eu²⁺; (Y,Gd,Lu,Sc,La) BO₃:Ce³⁺,Tb³⁺;Ca₈Mg(SiO₄)₄C₁₂:Eu²⁺, Mn²⁺; (Ba,Sr,Ca)₂SiO₄:Eu²⁺;(Ba,Sr,Ca)₂(Mg,Zn)Si₂O₇:Eu²⁺; (Sr,Ca,Ba)(Al,Ga,In)₂S₄:Eu²⁺;(Y,Gd,Tb,La,Sm,Pr,Lu)₃(Al,Ga)₅O₁₂:Ce³⁺;(Ca,Sr)₈(Mg,Zn)(SiO₄)₄C₁₂:Eu²⁺,Mn²⁺ (CASI); Na₂Gd₂B₂O₇:Ce³⁺,Tb³⁺;(Ba,Sr)₂(Ca,Mg,Zn)B₂O₆:K,Ce,Tb; and mixtures thereof. As an example, thered phosphor may be selected from the group consisting of(Gd,Y,Lu,La)₂O₃:Eu³⁺, Bi³⁺; (Gd,Y,Lu,La)₂O₂S:Eu³⁺,Bi³⁺;(Gd,Y,Lu,La)VO₄:Eu³⁺, Bi³⁺; Y₂(O,S)₃:Eu³⁺; Ca_(1-x)Mo_(1-y)Si_(y)O₄:,where 0.05≤x≤0.5, 0≤y≤0.1; (Li,Na,K)₅Eu(W,Mo)O₄; (Ca,Sr)S:Eu²⁺;SrY₂S₄:Eu²⁺; CaLa₂S₄:Ce³⁺; (Ca,Sr)S:Eu²⁺; 3.5MgO*0.5MgF₂*GeO₂:Mn⁴⁺(MFG); (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺,Mn²⁺; (Y,Lu)₂WO₆:Eu³⁺,Mo⁶⁺;(Ba,Sr,Ca)₃Mg_(x)Si₂O₈:Eu²⁺,Mn²⁺, wherein 1≤x≤2;(RE_(1-y)Ce_(y))Mg_(2-x)Li_(x)Si_(3-x)P_(x)O₁₂, where RE is at least oneof Sc, Lu, Gd, Y, and Tb, 0.0001<x<0.1 and 0.001<y<0.1; (Y, Gd, Lu,La)_(2-x)Eu_(x)W_(1-y)Mo_(y)O₆,where 0.5≤x.≤1.0, 0.01≤y≤1.0;(SrCa)_(1-x)Eu_(x)Si₅N₈, where 0.01≤x≤0.3; SrZnO₂:Sm⁺³; M_(m)O_(n)X,wherein M is selected from the group of Sc, Y, a lanthanide, an alkaliearth metal and mixtures thereof; X is a halogen; 1≤m≤3; and 1≤n≤4, andwherein the lanthanide doping level can range from 0.1 to 40% spectralweight; and Eu³⁺ activated phosphate or borate phosphors; and mixturesthereof.

In a specific embodiment, the present method includes providing anenclosure 117 overlying the LED device, which has been mounted, bonded,and coated. The enclosure can be made of a suitable material such as anoptically transparent plastic, epoxy, silicone, glass, or othermaterial. As also shown, the enclosure has a suitable shape 119according to a specific embodiment. The shape can be annular, circular,egg-shaped, trapezoidal, or any combination of these shapes. The shapemay be formed by molding. Depending upon the embodiment, the enclosurewith suitable shape and material is configured to facilitate and evenoptimize transmission of electromagnetic radiation from the LED devicewith coating through the surface region of the enclosure. Of course,there can be other variations, modifications, and alternatives.

FIG. 11 is a simplified diagram of an alternative packaged lightemitting device 1100 using multiple devices according to an embodimentof the present invention. This diagram is merely an illustration andshould not unduly limit the scope of the claims herein. One of ordinaryskill in the art would recognize other variations, modifications, andalternatives. In a specific embodiment, the present invention provides apackaged light emitting device 1100. As shown, the device has asubstrate member comprising a surface region. In a specific embodiment,the substrate is made of a suitable material such a metal including, butnot limited to, Alloy 42, copper, or others, including dielectrics andeven plastics. In a specific embodiment, the substrate is generally froma lead frame member such as metal alloy, but can be others.

In a specific embodiment, the present substrate, which holds the LED,can come in various shapes, sizes, and configurations. In a specificembodiment, the surface region of substrate 1101 is cupped.Alternatively, the surface region 1101 is recessed according to aspecific embodiment. Additionally, the surface region is generally asmooth surface, plating, or coating. Such plating or coating can begold, silver, platinum, aluminum, or any pure or alloy material, whichis suitable for bonding to an overlying semiconductor material, but canbe others. Of course, there can be other variations, modifications, andalternatives.

Referring again to FIG. 11, the device has at least one light emittingdiode device overlying the surface region. At least one of the lightemitting diode devices 1103 is fabricated on a semipolar or nonpolar GaNcontaining substrate. In a specific embodiment, the device emitspolarized electromagnetic radiation. As shown, the light emitting deviceis coupled to a first potential, which is attached to the substrate, anda second potential 1109, which is coupled to wire or lead 1111 bonded toa light emitting diode. Of course, there can be other variations,modifications, and alternatives.

In a specific embodiment, the device has at least one of the lightemitting diode devices comprising a quantum well region. In a specificembodiment, the quantum well region is characterized by an electron wavefunction and a hole wave function. The electron wave function and thehole wave function are substantially overlapped within a predeterminedspatial region of the quantum well region according to a specificembodiment. Of course, there can be other variations, modifications, andalternatives.

In a preferred embodiment, the at least one light emitting diode devicecomprises a blue LED device. In a specific embodiment, the substantiallypolarized emission is blue light. The at least one light emitting diodedevice comprises a blue LED device capable of emitting electromagneticradiation at a range from about 430 nanometers to about 490 nanometers,which is substantially polarized emission being blue light.

In a specific embodiment, the present device also has a thickness 1115of one or more entities comprising a transparent phosphor overlying theat least one light emitting diode device. In a specific embodiment, theone or more entities are excited by the substantially polarized emissionand emit electromagnetic radiation of one or more second wavelengths. Ina preferred embodiment, the plurality of entities is capable of emittingsubstantially yellow light from an interaction with the substantiallypolarized emission of blue light. In a specific embodiment, thethickness of the plurality of entities, which are phosphor entities, isless than about 1 millimeter, less than about 0.3 millimeter, less thanabout 0.1 millimeter, or less than about 10 micrometers. Of course,there can be other variations, modifications, and alternatives.

In a specific embodiment, the one or more entities comprises a phosphoror phosphor blend selected from one or more of (Y, Gd, Tb, Sc, Lu,La)₃(Al, Ga, In)₅O₁₂:Ce³⁺, SrGa₂S₄:Eu²⁺, and SrS:Eu²⁺. In otherembodiments, the device may include a phosphor capable of emittingsubstantially red light. Such phosphor is be selected from(Gd,Y,Lu,La)₂O₃:Eu³⁺,Bi³⁺; (Gd,Y,Lu,La)₂O₂S:Eu³⁺,Bi³⁺;(Gd,Y,Lu,La)VO₄:Eu³⁺,Bi³⁺; Y₂(O,S)₃:Eu³⁺; Ca_(1-x)Mo_(1-y)Si_(y)O₄:,where 0.05≤x≤0.5, 0≤y≤0.1; (Li,Na,K)₅Eu(W,Mo)O₄; (Ca,Sr)S:Eu²⁺;SrY₂S₄:Eu²⁺; CaLa₂S₄:Ce³⁺; (Ca,Sr)S:Eu²⁺; 3.5MgO*0.5MgF₂*GeO₂:Mn₄+(MFG); (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺,Mn²⁺; (Y,Lu)₂WO₆:Eu³⁺,Mo⁶⁺;(Ba,Sr,Ca)₃Mg_(x)Si₂O₈:Eu²⁺,Mn²⁺, wherein 1<x≤2;(RE_(1-y)Ce_(y))Mg_(2-x)Li_(x)Si_(3-x)P_(x)O₁₂, where RE is at least oneof Sc, Lu, Gd, Y, and Tb, 0.0001<x<0.1 and 0.001<y<0.1; (Y, Gd, Lu,La)_(2-x)Eu_(x)W_(1-y)Mo_(y)O₆,where 0.5≤x.≤1.0, 0.01≤y≤1.0;(SrCa)_(1-x)Eu_(x)Si₅N₈, where 0.01≤x≤0.3; SrZnO₂:Sm⁺³; M_(m)O_(n)Xwherein M is selected from the group of Sc, Y, a lanthanide, an alkaliearth metal and mixtures thereof; X is a halogen; 1≤m≤3; and 1≤n≤4, andwherein the lanthanide doping level can range from 0.1 to 40% spectralweight; and Eu³⁺ activated phosphate or borate phosphors; and mixturesthereof. Of course, there can be other variations, modifications, andalternatives.

In a specific embodiment, the at least one light emitting diode devicecomprises at least a violet LED device capable of emittingelectromagnetic radiation at a range from about 380 nanometers to about440 nanometers and the one or more entities are capable of emittingsubstantially white light, the substantially polarized emission beingviolet light. Other colored LEDs may also be used or combined accordingto a specific embodiment. Of course, there can be other variations,modifications, and alternatives.

In a specific embodiment, the one or more entities comprise a blend ofphosphors capable of emitting substantially blue light, substantiallygreen light, and substantially red light. As an example, the blueemitting phosphor is selected from the group consisting of(Ba,Sr,Ca)₅(PO₄)₃(Cl,F,Br,OH):Eu²⁺,Mn²⁺;Sb³⁺,(Ba,Sr,Ca)MgAl₁₀O₁₇:Eu²⁺,Mn²⁺; (Ba,Sr,Ca)BPO₅:Eu²⁺,Mn²⁺;(Sr,Ca)₁₀(PO₄)₆*nB₂O₃:Eu²⁺; 2SrO*0.84P₂O₅*0.16B₂O₃:Eu²⁺;Sr₂Si₃O₈*2SrCl₂:Eu²⁺; (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺,Mn²⁺; Sr₄Al₁₄O₂₅:Eu²⁺(SAE); BaAl₈O₁₃:Eu²⁺; and mixtures thereof. As an example, the greenphosphor is selected from the group consisting of(Ba,Sr,Ca)MgAl₁₀O₁₇:Eu²⁺,Mn²⁺ (BAMn); (Ba,Sr,Ca)Al₂O₄:Eu²⁺;(Y,Gd,Lu,Sc,La)BO₃:Ce³⁺,Tb³⁺; Ca₈Mg(SiO₄)₄C₁₂:Eu²⁺,Mn²⁺;(Ba,Sr,Ca)₂SiO₄:Eu²⁺; (Ba,Sr,Ca)₂(Mg,Zn) Si₂O₇:Eu²⁺;(Sr,Ca,Ba)(Al,Ga,In)₂S₄:Eu²⁺; (Y,Gd,Tb,La,Sm,Pr,Lu)₃(Al,Ga)₅O₁₂:Ce³⁺;(Ca,Sr)₈(Mg,Zn)(SiO₄)₄Cl₂:Eu²⁺,Mn²⁺ (CASI); Na₂Gd₂B₂O₇:Ce³⁺,Tb³⁺;(Ba,Sr)₂(Ca,Mg,Zn)B₂O₆:K,Ce,Tb; and mixtures thereof. As an example, thered phosphor is selected from the group consisting of(Gd,Y,Lu,La)₂O₃:Eu³⁺,Bi³⁺; (Gd,Y,Lu,La)₂O₂S:Eu³⁺,Bi³⁺;(Gd,Y,Lu,La)VO₄:Eu³⁺,Bi³⁺; Y₂(O,S)₃:Eu³⁺; Ca_(1-x)Mo_(1-y)Si_(y)O₄:,where 0.05≤x≤0.5, 0≤y≤0.1; (Li,Na,K)₅Eu(W,Mo)O₄; (Ca,Sr)S:Eu²⁺;SrY₂S₄:Eu²⁺; CaLa₂S₄:Ce³⁺; (Ca,Sr)S:Eu²⁺; 3.5MgO*0.5MgF₂*GeO₂:Mn⁴⁺(MFG); (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺,Mn²⁺; (Y,Lu)₂WO₆:Eu³⁺, Mo⁶⁺;(Ba,Sr,Ca)₃Mg_(x)Si₂O₈:Eu²⁺, Mn²⁺, wherein 1≤x≤2;(RE_(1-y)Ce_(y))Mg_(2-x)Li_(x)Si_(3-x)P_(x)O₁₂, where RE is at least oneof Sc, Lu, Gd, Y, and Tb, 0.0001<x<0.1 and 0.001<y<0.1; (Y, Gd, Lu,La)_(2-x)Eu_(x)W_(1-y)Mo_(y)O₆,where 0.5≤x≤1.0, 0.01≤y≤1.0;(SrCa)_(1-x)Eu_(x)Si₅N₈, where 0.01≤x≤0.3; SrZnO₂:Sm⁺³; M_(m)O_(n)X,wherein M is selected from the group of Sc, Y, a lanthanide, an alkaliearth metal and mixtures thereof; X is a halogen; 1≤m≤3; and 1≤n≤4, andwherein the lanthanide doping level can range from 0.1 to 40% spectralweight; and Eu³⁺ activated phosphate or borate phosphors; and mixturesthereof.

In a specific embodiment, the present packaged device includes a secondLED device or possibly multiple devices. In a specific embodiment, thesecond LED device can be covered by a transparent a phosphor oruncovered. In a specific embodiment, the LED device can be one of aplurality of colors including, but not limited to red, blue, green,yellow, violet, amber, cyan, and others within a visible electromagneticradiation range, including ultraviolet. In a specific embodiment, theLED device can be made on a polar, nonpolar, or semi-polar galliumnitride containing material. Alternatively, the LED can be made on aGaP, AlInGaP or like material according to other embodiments. Of course,there can be other variations, modifications, and alternatives.

In other embodiments, the packaged device can include one or more othertypes of optical and/or electronic devices. As an example, the opticaldevices can be an organic light emitting diode (OLED), a laser diode, ananoparticle optical device, or others. In other embodiments, theelectronic device can include an integrated circuit, a sensor, a Micro-or Nano-Electro-Mechanical System, or any combination of these, and thelike. Of course, there can be other variations, modifications, andalternatives.

In a specific embodiment, the present packaged device includes anenclosure 1117. The enclosure can be made of a suitable material such asan optically transparent plastic, glass, or other material. As alsoshown, the enclosure has a suitable shape 1119 according to a specificembodiment. The shape can be annular, circular, egg-shaped, trapezoidal,or any combination of these. Depending upon the embodiment, theenclosure with suitable shape and material is configured to facilitateand even optimize transmission of electromagnetic radiation from the LEDdevice with coating through the surface region of the enclosure. Ofcourse, there can be other variations, modifications, and alternatives.

FIGS. 12 through 15 illustrate a simplified method of assembling thelight emitting device of FIG. 6 according to an embodiment of thepresent invention. Of course, there can be other variations,modifications, and alternatives.

FIG. 16 is a simplified diagram of yet another alternative packagedlight emitting device using an optical path to a plane region accordingto an embodiment of the present invention. This diagram is merely anillustration and should not unduly limit the scope of the claims herein.One of ordinary skill in the art would recognize other variations,modifications, and alternatives. In a specific embodiment, the presentinvention provides a packaged light emitting device 1600. As shown, thedevice has a substrate member comprising a surface region. In a specificembodiment, the substrate is made of a suitable material such a metalincluding, but not limited to, Alloy 42, copper, dielectrics orplastics, among others. In a specific embodiment, the substrate isgenerally from a lead frame member such as a metal alloy, but can beothers.

In a specific embodiment, the present substrate, which holds the LED,can come in various shapes, sizes, and configurations. In a specificembodiment, the surface region of substrate 1601 is cupped.Alternatively, the surface region 1601 is recessed according to aspecific embodiment. Additionally, the surface region is generally asmooth surface, plating, or coating. Such plating or coating can begold, silver, platinum, aluminum, or any pure or alloy material, whichis suitable for bonding to an overlying semiconductor material, but canbe others. Of course, there can be other variations, modifications, andalternatives.

Referring again to FIG. 16, the device has at least one light emittingdiode device overlying the surface region. At least one of the lightemitting diode devices 1603 is fabricated on a semipolar or nonpolar GaNcontaining substrate. In a specific embodiment, the device emitssubstantially polarized electromagnetic radiation 1605. As shown, thelight emitting device is coupled to a first potential, which is attachedto the substrate, and a second potential 1609, which is coupled to wireor lead 1611 bonded to a light emitting diode. Of course, there can beother variations, modifications, and alternatives.

In a specific embodiment, the device has at least one of the lightemitting diode devices comprising a quantum well region. In a specificembodiment, the quantum well region is characterized by an electron wavefunction and a hole wave function. The electron wave function and thehole wave function are substantially overlapped within a predeterminedspatial region of the quantum well region according to a specificembodiment. Of course, there can be other variations, modifications, andalternatives.

In a preferred embodiment, the at least one light emitting diode devicecomprises a blue LED device. In a specific embodiment, the substantiallypolarized emission is blue light. The at least one light emitting diodedevice comprises a blue LED device capable of emitting electromagneticradiation at a range from about 430 nanometers to about 490 nanometers,which is substantially polarized emission being blue light.

In a specific embodiment, the present packaged device includes anenclosure 1617. The enclosure can be made of a suitable material such asan optically transparent plastic, glass, or other material. As alsoshown, the enclosure has a suitable shape 1619 according to a specificembodiment. The shape can be annular, circular, egg-shaped, trapezoidal,or any combination of these. Depending upon the embodiment, theenclosure with suitable shape and material is configured to facilitateand even optimize transmission of electromagnetic radiation from the LEDdevice through the surface region of the enclosure. In a specificembodiment, the enclosure comprises an interior region and an exteriorregion with a volume defined within the interior region. The volume isopen and filled with a fluid, such as epoxy or silicone to provide anoptical path between the LED device or devices and the surface region ofthe enclosure. In a specific embodiment, the enclosure also has athickness and fits around a base region of the substrate. Of course,there can be other variations, modifications, and alternatives.

In a specific embodiment, the present packaged device also has athickness 1615 of one or more entities comprising a transparent phosphoroverlying the enclosure to interact with light from the at least onelight emitting diode device. In a specific embodiment, the one or moreentities are excited by the substantially polarized emission and emitsubstantially polarized electromagnetic radiation of one or more secondwavelengths. In a preferred embodiment, the plurality of entities iscapable of emitting substantially polarized yellow light from aninteraction with the substantially polarized emission of blue light. Ina specific embodiment, the thickness of the plurality of entities, whichare transparent phosphor entities, is less than about 1 millimeter, lessthan about 0.3 millimeter, less than about 0.1 millimeter, or less thanabout 10 micrometers. Of course, there can be other variations,modifications, and alternatives.

In a specific embodiment, the one or more entities comprises a phosphoror phosphor blend selected from one or more of (Y, Gd, Tb, Sc, Lu,La)₃(Al, Ga, In)₅O₁₂:Ce³⁺, SrGa₂S₄:Eu²⁺, and SrS:Eu²⁺. In otherembodiments, the device may include a phosphor capable of emittingsubstantially red light. Such phosphor may be selected from(Gd,Y,Lu,La)₂O₃:Eu³⁺,Bi³⁺; (Gd,Y,Lu,La)₂O₂S:Eu³⁺,Bi³⁺;(Gd,Y,Lu,La)VO₄:Eu³⁺,Bi³⁺; Y₂(O,S)₃:Eu³⁺; Ca_(1-x)Mo_(1-y)Si_(y)O₄:,where 0.05≤x≤0.5, 0≤y≤0.1; (Li,Na,K)₅Eu(W,Mo)O₄; (Ca,Sr)S:Eu²⁺;SrY₂S₄:Eu²⁺; CaLa₂S₄:Ce³⁺; (Ca,Sr)S:Eu²⁺; 3.5MgO*0.5MgF₂*GeO₂:Mn⁴⁺(MFG); (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺,Mn²⁺; (Y,Lu)₂WO₆:Eu³⁺,Mo⁶⁺;(Ba,Sr,Ca)₃Mg_(x)Si₂O₈:Eu²⁺,Mn²⁺, wherein 1<x≤2;(RE_(1-y)Ce_(y))Mg_(2-x)Li_(x)Si_(3-x)P_(x)O₁₂, where RE is at least oneof Sc, Lu, Gd, Y, and Tb, 0.0001<x<0.1 and 0.001<y<0.1; (Y, Gd, Lu,La)_(2-x)Eu_(x)W_(1-y)Mo_(y)O₆,where 0.5≤x.≤1.0, 0.001≤y≤1.0;(SrCa)_(1-x)Eu_(x)Si₅N₈, where 0.01≤x≤0.3; SrZnO₂:Sm⁺³; M_(m)O_(n)Xwherein M is selected from the group of Sc, Y, a lanthanide, an alkaliearth metal and mixtures thereof; X is a halogen; 1≤m≤3; and 1≤n≤4, andwherein the lanthanide doping level can range from 0.1 to 40% spectralweight; and Eu³⁺ activated phosphate or borate phosphors; and mixturesthereof. Of course, there can be other variations, modifications, andalternatives.

In a specific embodiment, the at least one light emitting diode devicecomprises at least a violet LED device capable of emittingelectromagnetic radiation at a range from about 380 nanometers to about440 nanometers and the one or more entities are capable of emittingsubstantially white light, the substantially polarized emission beingviolet light. Other colored LEDs may also be used or combined accordingto a specific embodiment. Of course, there can be other variations,modifications, and alternatives.

In a specific embodiment, the one or more entities comprise a blend ofphosphors capable of emitting substantially blue light, substantiallygreen light, and substantially red light. As an example, the blueemitting phosphor is selected from the group consisting of(Ba,Sr,Ca)₅(PO₄)₃(Cl,F,Br,OH):Eu²⁺,Mn²⁺;Sb³⁺,(Ba,Sr,Ca)MgAl₁₀O₁₇:Eu²⁺,Mn²⁺; (Ba,Sr,Ca)BPO₅:Eu²⁺,Mn²⁺;(Sr,Ca)₁₀(PO₄)₆*nB₂O₃:Eu²⁺; 2SrO*0.84P₂O₅*0.16B₂O₃:Eu²⁺;Sr₂Si₃O₈*2SrCl₂:Eu²⁺; (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺,Mn²⁺; Sr₄Al₁₄O₂₅:Eu²⁺(SAE); BaAl₈O₁₃:Eu²⁺; and mixtures thereof. As an example, the greenphosphor is selected from the group consisting of(Ba,Sr,Ca)MgAl₁₀O₁₇:Eu²⁺,Mn²⁺ (BAMn); (Ba,Sr,Ca)Al₂O₄:Eu²⁺;(Y,Gd,Lu,Sc,La)BO₃:Ce³⁺,Tb³⁺; Ca₈Mg(SiO₄)₄Cl₂:Eu²⁺, Mn²⁺;(Ba,Sr,Ca)₂SiO₄:Eu²⁺; (Ba,Sr,Ca)₂(Mg,Zn)Si₂O₇:Eu²⁺;(Sr,Ca,Ba)(Al,Ga,In)₂S₄:Eu²⁺; (Y,Gd,Tb,La,Sm,Pr,Lu)₃(Al,Ga)₅O₁₂:Ce³⁺;(Ca,Sr)₈(Mg,Zn)(SiO₄)₄Cl₂:Eu²⁺,Mn²⁺ (CASI); Na₂Gd₂B₂O₇:Ce³⁺,Tb³⁺;(Ba,Sr)₂(Ca,Mg,Zn)B₂O₆:K,Ce,Tb; and mixtures thereof. As an example, thered phosphor is selected from the group consisting of(Gd,Y,Lu,La)₂O₃:Eu³⁺,Bi³⁺; (Gd,Y,Lu,La)₂O₂S:Eu³⁺,Bi³⁺;(Gd,Y,Lu,La)VO₄:Eu³⁺,Bi³⁺; Y₂(O,S)₃:Eu³⁺; Ca_(1-x)Mo_(1-y)Si_(y)O₄:,where 0.05≤x≤0.5, 0≤y≤0.1; (Li,Na,K)₅Eu(W,Mo)O₄; (Ca,Sr)S:Eu²⁺;SrY₂S₄:Eu²⁺; CaLa₂S₄:Ce³⁺; (Ca,Sr)S:Eu²⁺; 3.5MgO*0.5MgF₂*GeO₂:Mn⁴⁺(MFG); (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺,Mn²⁺; (Y,Lu)₂WO₆:Eu³⁺,Mo⁶⁺;(Ba,Sr,Ca)₃Mg_(x)Si₂O₈:Eu²⁺,Mn²⁺, wherein 1≤x≤2;(RE_(1-y)Ce_(y))Mg_(2-x)Li_(x)Si_(3-x)P_(x)O₁₂, where RE is at least oneof Sc, Lu, Gd, Y, and Tb, 0.0001<x<0.1 and 0.001<y<0.1; (Y, Gd, Lu,La)_(2-x)Eu_(x)W_(1-y)Mo_(y)O₆, where 0.5≤x.≤1.0, 0.01≤y≤1.0;(SrCa)_(1-x)Eu_(x)Si₅N₈, where 0.01≤x≤0.3; SrZnO₂:Sm⁺³; M_(m)O_(n)X,wherein M is selected from the group of Sc, Y, a lanthanide, an alkaliearth metal and mixtures thereof; X is a halogen; 1≤m≤3; and 1≤n≤4, andwherein the lanthanide doping level can range from 0.1 to 40% spectralweight; and Eu³⁺ activated phosphate or borate phosphors; and mixturesthereof.

FIGS. 17 through 20 illustrate a simplified method of assembling thelight emitting device of FIG. 16 according to an embodiment of thepresent invention. These diagrams are merely an example, which shouldnot unduly limit the scope of the claims herein. One of ordinary skillin the art would recognize other variations, modifications, andalternatives.

FIG. 16 is a simplified diagram of yet another alternative packagedlight emitting device 1600 using an optical path to a plane region andfiller material according to an embodiment of the present invention.This diagram is merely an illustration and should not unduly limit thescope of the claims herein. One of ordinary skill in the art wouldrecognize other variations, modifications, and alternatives. In aspecific embodiment, the present invention provides a packaged lightemitting device 1600. As shown, the device has a substrate membercomprising a surface region. In a specific embodiment, the substrate ismade of a suitable material such a metal including, but not limited to,Alloy 42, copper, dielectric, or even plastic, among others. In aspecific embodiment, the substrate is generally from a lead frame membersuch as a metal alloy, but can be others.

In a specific embodiment, the present substrate, which holds the LED,can come in various shapes, sizes, and configurations. In a specificembodiment, the surface region of substrate 1601 is cupped.Alternatively, the surface region of substrate 1601 is recessedaccording to a specific embodiment. Additionally, the surface region isgenerally smooth and may be plated or coated. Such plating or coatingcan be gold, silver, platinum, or any pure or alloy material, which issuitable for bonding to an overlying semiconductor material, but can beothers. Of course, there can be other variations, modifications, andalternatives.

Referring again to FIG. 1, the device has at least one light emittingdiode device overlying the surface region. Each of the light emittingdiode device 1603 is fabricated on a semipolar or nonpolar GaNcontaining substrate. In a specific embodiment, the device emitspolarized electromagnetic radiation 1605. As shown, the light emittingdevice is coupled to a first potential, which is attached to thesubstrate, and a second potential 1609, which is coupled to wire or lead1611 bonded to a light emitting diode. Of course, there can be othervariations, modifications, and alternatives.

In a specific embodiment, the device has at least one of the lightemitting diode devices comprising a quantum well region. In a specificembodiment, the quantum well region is characterized by an electron wavefunction and a hole wave function. The electron wave function and thehole wave function are substantially overlapped within a predeterminedspatial region of the quantum well region according to a specificembodiment. Of course, there can be other variations, modifications, andalternatives.

In a preferred embodiment, the at least one light emitting diode devicecomprises a blue LED device. In a specific embodiment, the substantiallypolarized emission is blue light. The at least one light emitting diodedevice comprises a blue LED device capable of emitting electromagneticradiation at a range from about 480 nanometers to about 570 nanometers,which is substantially polarized emission being blue light.

In a specific embodiment, the present device also has a thickness 1615of one or more entities comprising a transparent phosphor overlying theat least one light emitting diode device and within an interior regionof enclosure 1617, which will be described in more detail below. In aspecific embodiment, the one or more entities are excited by thesubstantially polarized emission and emit substantially polarizedelectromagnetic radiation of one or more second wavelengths. In apreferred embodiment, the plurality of entities is capable of emittingsubstantially yellow light from an interaction with the substantiallypolarized emission of blue light. In a specific embodiment, thethickness of the plurality of entities, which are phosphor entities, isless than about 1 millimeter, less than about 0.3 millimeter, less thanabout 0.1 millimeter, or less than about 10 micrometers. Of course,there can be other variations, modifications, and alternatives.

In a specific embodiment, the one or more entities comprises a phosphoror phosphor blend selected from one or more of (Y, Gd, Tb, Sc, Lu,La)₃(Al, Ga, In)₅O₁₂:Ce³⁺, SrGa₂S₄:Eu²⁺, and SrS:Eu²⁺. In otherembodiments, the device may include a phosphor capable of emittingsubstantially red light. Such phosphor is be selected from(Gd,Y,Lu,La)₂O₃:Eu³⁺,Bi³⁺; (Gd,Y,Lu,La)₂O₂S:Eu³⁺,Bi³⁺;(Gd,Y,Lu,La)VO₄:Eu³⁺,Bi³⁺; Y₂(O,S)₃:Eu³⁺; Ca_(1-x)Mo_(1-y)Si_(y)O₄:,where 0.05≤x≤0.5, 0≤y≤0.1; (Li,Na,K)₅Eu(W,Mo)O₄; (Ca,Sr)S:Eu²⁺;SrY₂S₄:Eu²⁺; CaLa₂S₄:Ce³⁺; (Ca,Sr)S:Eu²⁺; 3.5MgO*0.5MgF₂*GeO₂:Mn⁴⁺(MFG); (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺, Mn²⁺; (Y,Lu)₂WO₆:Eu³⁺,Mo⁶⁺;(Ba,Sr,Ca)₃Mg_(x)Si₂O₈:Eu²⁺,Mn²⁺, wherein 1<x≤2;(RE_(1-y)Ce_(y))Mg_(2-x)Li_(x)Si_(3-x)P_(x)O₁₂, where RE is at least oneof Sc, Lu, Gd, Y, and Tb, 0.0001<x<0.1 and 0.001<y<0.1; (Y, Gd, Lu,La)_(2-x)Eu_(x)W_(1-y)Mo_(y)O₆,where 0.5≤x.≤1.0, 0.01≤y≤1.0;(SrCa)_(1-x)Eu_(x)Si₅N₈, where 0.01≤x≤0.3; SrZnO₂:Sm⁺³; M_(m)O_(n)Xwherein M is selected from the group of Sc, Y, a lanthanide, an alkaliearth metal and mixtures thereof; X is a halogen; 1≤m≤3; and 1≤n≤4, andwherein the lanthanide doping level can range from 0.1 to 40% spectralweight; and Eu³⁺ activated phosphate or borate phosphors; and mixturesthereof. Of course, there can be other variations, modifications, andalternatives.

In a specific embodiment, the at least one light emitting diode devicecomprises at least a violet LED device capable of emittingelectromagnetic radiation at a range from about 380 nanometers to about440 nanometers and the one or more entities are capable of emittingsubstantially white light, the substantially polarized emission beingviolet light. Other colored LEDs may also be used or combined accordingto a specific embodiment. Of course, there can be other variations,modifications, and alternatives.

In a specific embodiment, the one or more entities comprise a blend ofphosphors capable of emitting substantially blue light, substantiallygreen light, and substantially red light. As an example, the blueemitting phosphor is selected from the group consisting of(Ba,Sr,Ca)₅(PO₄)₃(Cl,F,Br,OH):Eu²⁺,Mn²⁺;Sb³⁺,(Ba,Sr,Ca)MgAl₁₀O₁₇:Eu²⁺,Mn²⁺;(Ba,Sr,Ca)BPO₅:Eu²⁺,Mn²⁺; (Sr,Ca)₁₀(PO₄)₆*nB₂O₃:Eu²⁺;2SrO*0.84P₂O₅*0.16B₂O₃:Eu²⁺; Sr₂Si₃O₈*2SrCl₂:Eu²⁺;(Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺,Mn²⁺; Sr4Al₁₄O₂₅:Eu²⁺ (SAE); BaAl₈O₁₃:Eu²⁺;and mixtures thereof. As an example, the green phosphor is selected fromthe group consisting of (Ba,Sr,Ca)MgAl₁₀O₁₇:Eu²⁺,Mn²⁺ (BAMn);(Ba,Sr,Ca)Al₂O₄:Eu²⁺; (Y,Gd,Lu,Sc,La)BO₃:Ce³⁺,Tb³⁺;Ca₈Mg(SiO₄)₄Cl₂:Eu²⁺,Mn²⁺; (Ba,Sr,Ca)₂SiO₄:Eu²⁺;(Ba,Sr,Ca)₂(Mg,Zn)Si₂O₇:Eu²⁺; (Sr,Ca,Ba)(Al,Ga,In)₂S₄:Eu²⁺;(Y,Gd,Tb,La,Sm,Pr,Lu)₃(Al,Ga)₅O₁₂:Ce³⁺;(Ca,Sr)₈(Mg,Zn)(SiO₄)₄Cl₂:Eu²⁺,Mn²⁺ (CASI); Na₂Gd₂B₂O₇:Ce³⁺,Tb³⁺;(Ba,Sr)₂(Ca,Mg,Zn)B₂O₆:K,Ce,Tb; and mixtures thereof. As an example, thered phosphor is selected from the group consisting of(Gd,Y,Lu,La)₂O₃:Eu³⁺,Bi³⁺; (Gd,Y,Lu,La)₂O₂S:Eu³⁺,Bi³⁺;(Gd,Y,Lu,La)VO₄:Eu³⁺,Bi³⁺; Y₂(O,S)₃:Eu³⁺; Ca_(1-x)Mo_(1-y)Si_(y)O₄:,where 0.05≤x≤0.4, 0≤y≤0.1; (Li,Na,K)₅Eu(W,Mo)O₄; (Ca,Sr)S:Eu²⁺;SrY₂S₄:Eu²⁺; CaLa₂S₄:Ce³⁺; (Ca,Sr)S:Eu²⁺; 3.5MgO*0.5MgF₂*GeO₂:Mn^(4′)(MFG); (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺,Mn²⁺; (Y,Lu)₂WO₆:Eu³⁺,Mo⁶⁺;(Ba,Sr,Ca)₃Mg_(x)Si₂O₈:Eu²⁺,Mn²⁺, wherein 1<x≤2;(RE_(1-y)Ce_(y))Mg_(2-x)Li_(x)Si_(3-x)P_(x)O₁₂, where RE is at least oneof Sc, Lu, Gd, Y, and Tb, 0.0001<x<0.1 and 0.001<y<0.1; (Y, Gd, Lu,La)_(2-x)Eu_(x)W_(1-y)Mo_(y)O₆,where 0.5≤x.≤1.0, 0.01≤y≤1.0;(SrCa)_(1-x)Eu_(x)Si₅N₈, where 0.01≤x≤0.3; SrZnO₂:Sm⁺³; M_(m)O_(n)X,wherein M is selected from the group of Sc, Y, a lanthanide, an alkaliearth metal and mixtures thereof; X is a halogen; 1≤m≤3; and 1≤n≤4, andwherein the lanthanide doping level can range from 0.1 to 40% spectralweight; and Eu³⁺ activated phosphate or borate phosphors; and mixturesthereof.

In a specific embodiment, the present packaged device includes anenclosure 1617. The enclosure can be made of a suitable material such asan optically transparent plastic, glass, or other material. As alsoshown, the enclosure has a suitable shape 1619 according to a specificembodiment. The shape can be annular, circular, egg-shaped, trapezoidal,or any combination of these shapes. Depending upon the embodiment, theenclosure with suitable shape and material is configured to facilitateand even optimize transmission of electromagnetic radiation from the LEDdevice through the surface region of the enclosure. In a specificembodiment, the enclosure comprises an interior region and an exteriorregion with a volume defined within the interior region. The volume isopen and filled with a fluid, such as epoxy or silicone to provide anoptical path between the LED device or devices and the surface region ofthe enclosure. In a specific embodiment, the enclosure also has athickness and fits around a base region of the substrate. Of course,there can be other variations, modifications, and alternatives.

FIGS. 17 through 20 illustrate a simplified method of assembling thelight emitting device of FIG. 16 according to an embodiment of thepresent invention.

FIG. 21 is a simplified diagram of a yet an alternative packaged lightemitting device using an optical path to a plane region according to anembodiment of the present invention. As shown, the packaged lightemitting device includes one or more transparent phosphor entitiesformed within an interior region of enclosure 2117. As shown, the one ormore entities can be deposited within the interior region facing thelight emitting diode devices.

FIG. 22 is a simplified diagram of a yet an alternative packaged lightemitting device using an optical path to a plane region according to anembodiment of the present invention. As shown, the packaged lightemitting device includes one or more transparent phosphor entitiesformed within of a thickness of or as a portion of enclosure 2617. Asshown, the one or more entities can be formed within a thickness andformed within the enclosure according to a specific embodiment.

Although the above has been described in terms of an embodiment of aspecific package, there can be many variations, alternatives, andmodifications. As an example, the LED device can be configured in avariety of packages such as cylindrical, surface mount, power, lamp,flip-chip, star, array, strip, or geometries that rely on lenses(silicone, glass) or sub-mounts (ceramic, silicon, metal, composite).Alternatively, the package can be any variations of these packages. Ofcourse, there can be other variations, modifications, and alternatives.

In other embodiments, the packaged device can include one or more othertypes of optical and/or electronic devices. As an example, the opticaldevices can be OLED, a laser, a nanoparticle optical device, and others.In other embodiments, the electronic device can include an integratedcircuit, a sensor, a micro-electro-mechanical system, or any combinationof these, and the like. Of course, there can be other variations,modifications, and alternatives.

In a specific embodiment, the packaged device can be coupled to arectifier to convert alternating current power to direct current, whichis suitable for the packaged device. The rectifier can be coupled to asuitable base, such as an Edison screw such as E27 or E14, bipin basesuch as MR16 or GU5.3, or a bayonet mount such as GU10, or others. Inother embodiments, the rectifier can be spatially separated from thepackaged device. Of course, there can be other variations,modifications, and alternatives.

Additionally, the present packaged device can be provided in a varietyof applications. In a preferred embodiment, the application is generallighting, which includes buildings for offices, housing, outdoorlighting, stadium lighting, and others. Alternatively, the applicationscan be for display, such as those used for computing applications,televisions, projectors, micro-, nano-, or pico-projectors, flat panels,micro-displays, and others. Still further, the applications can includeautomotive, gaming, and others. Of course, there can be othervariations, modifications, and alternatives.

EXAMPLE 1

To prove the operation and method of the present invention, we performedexperiments and provide these examples. These examples are illustrativeand should not limit the scope of the claims herein. One of ordinaryskill in the art would recognize other variations, modifications, andalternatives. In our example, metallic p-type contacts (Ni/Au/Ti/Au)were formed overlying the p-GaN contact layer of an LED device structureemitting electromagnetic radiation at a nominal wavelength of 450 nm,provided on a bulk non-polar GaN substrate. The LED device structure wasgenerally conventional in design, although other device structures canbe used according to other embodiments and/or examples. Next, 300 um×300um LED mesas were then defined using a Cl₂ based reactive ion etch. Thebackside of the substrate was then polished using a chemical-mechanicalpolishing process, resulting in an optically flat and transparent backsurface. Metallic indium was then deposited in contact with the edge ofthe substrate as a common n-type electrical contact for the plurality ofLED devices. Of course, there can be other variations, modifications,and alternatives.

The substrate was then placed overlying an optically transparentpolycrystalline ceramic YAG:Ce (Ce=0.5% by weight) phosphor plate withnominal lateral dimensions of 10 mm×10 mm and a nominal thickness of 0.5mm in our example. The substrate and the phosphor plate were then placedoverlying a circular aperture (diameter˜3 mm) in a sample stage, such asthe LED device under test was substantially centered with respect to theaperture. The electromagnetic radiation emitted from the LED device at afirst wavelength which is substantially blue was thus used to excite thetransparent YAG phosphor and induce the emission of light at a secondcharacteristic wavelength which was substantially yellow, with thecombined emission from the LED device and the phosphor beingsubstantially white. A circular polarizing filter was positionedunderneath the aperture in the sample stage, using a fixture whichenabled the rotation of the polarizing filter about an imaginary opticalaxis defined by the LED device under test, the center of the aperture ofthe stage, and the geometrical center of the substantial surface of thepolarizing filter. A silicon photodiode was then positioned underneaththe polarizing filter, such that a substantial fraction of theelectromagnetic radiation that was transmitted through the polarizingfilter was incident upon the surface of the silicon photodiode. Thephoto-current generated in the silicon photodiode as a result of theelectromagnetic radiation incident upon it was measured using a Keithley2600 sourcemeter, but can be other instruments.

A pair of micromanipulator probes was used to contact thep-metallization on the LED device under test, and n-metallization on theedge of the substrate containing the LED device under test, and aKeithley 2600 sourcemeter was used to electrically drive the LED. Thepolarizing filter was aligned to a first position with respect to theLED device under test in a manner such that either one of the twoorthogonal emission dipoles (strong and weak) representing the emissionfrom the LED device surface was parallel to the transmission axis of thepolarizing filter. Following this alignment, the strength of theemission from the strong and the weak dipole of electromagneticradiation emitted from the LED device was separated into two componentssimply by rotation of the polarizing filter by 90 degrees about theoptical axis from the first position to a second position. The intensityof light at each of these two positions, represented by the respectivevalues of the photo-current, was measured, and was then used tocalculate the polarization ratio for the emission using the well knownrelationship, polarizationratio=[I(strong)−I(weak)]/[I(strong)+I(weak)]. In this experimentalsetup, a non-zero value of the polarization ratio indicates that theelectromagnetic radiation measured by the Si photodiode is at leastpartially polarized. The experimental setup described above is shownschematically in FIG. 33A. The emission from the blue LED device alonewas determined to be partially polarized with a high polarization ratioof between 0.7-0.9 for the selected LED device structure.

FIG. 33B depicts the calculated polarization ratio for the combinedemission from the LED device and the transparent polycrystalline ceramicYAG phosphor, measured in the manner described above, for a range ofelectrical drive currents applied to the LED device. This data clearlyshows that the combined emission from the LED device and the transparentphosphor is partially polarized, thereby verifying the operation of thepresent method and device of the invention described in this letter byway of example.

FIG. 33C additionally shows the total measured light output power foreach of the two respective orientation of the polarizing filter (0degrees and 90 degrees) as a function of drive current. The differencein measured light output power between the two alignments at a givendrive current further indicates a difference in the intensity of emittedelectromagnetic radiation along the two orthogonal polarizationdirections, thereby implying that the measured light is partiallypolarized. Again, we have demonstrated the operation of the presentmethod and devices according to one or more embodiments.

Additionally, the present device can be provided in a variety ofapplications. In a preferred embodiment, the application is generallighting, which includes buildings for offices, housing, outdoorlighting, stadium lighting, and others. Alternatively, the applicationscan be for display, such as those used for computing applications,televisions, flat panels, micro-displays, and others. Still further, theapplications can include automotive, gaming, and others. Of course,there can be other variations, modifications, and alternatives.

In a specific embodiment, the present devices are configured to achievespatial uniformity. That is, diffusers can be added to the encapsulantto achieve spatial uniformity. Depending upon the embodiment, thediffusers can include TiO₂, CaF₂, SiO₂, CaCO₃, BaSO₄, and others, whichare optically transparent and have a different index than an encapsulantcausing the light to reflect, refract, and scatter to make the far fieldpattern more uniform. Of course, there can be other variations,modifications, and alternatives.

As used herein, the term GaN substrate is associated with GroupIII-nitride based materials including GaN, InGaN, AlGaN, or other GroupIII containing alloys or compositions that are used as startingmaterials. Such starting materials include polar GaN substrates (i.e.,substrate where the largest area surface is nominally an (h k l) planewherein h=k=0, and l is non-zero), non-polar GaN substrates (i.e.,substrate material where the largest area surface is oriented at anangle ranging from about 80-100 degrees from the polar orientationdescribed above towards an (h k l) plane wherein l=0, and at least oneof h and k is non-zero) or semi-polar GaN substrates (i.e., substratematerial where the largest area surface is oriented at an angle rangingfrom about +0.1 to 80 degrees or 110-179.9 degrees from the polarorientation described above towards an (h k l) plane wherein l=0, and atleast one of h and k is non-zero). In yet other embodiments, the presentgallium and nitrogen containing substrate may also include other planes,e.g., c-plane. Of course, there can be other variations, modifications,and alternatives.

In one or more specific embodiments, wavelength conversion materials canbe ceramic or semiconductor particle phosphors, ceramic or semiconductorplate phosphors, organic or inorganic downconverters, upconverters(anti-stokes), nano-particles and other materials which providewavelength conversion. Some examples are listed below

(Sr,Ca)10(PO4)6*DB2O3:Eu2+ (wherein 0<n^1)

(Ba,Sr,Ca)5(PO4)3(Cl,F,Br,OH):Eu2+,Mn2+

(Ba,Sr,Ca)BPO5:Eu2+,Mn2+

Sr2Si3O8*2SrCl2:Eu2+

(Ca,Sr,Ba)3MgSi2O8:Eu2+, Mn2+

BaAl8O13:Eu2+

2SrO*0.84P2O5*0.16B2O3:Eu2+

(Ba,Sr,Ca)MgAl10O17:Eu2+,Mn2+

K2SiF6:Mn4+

(Ba,Sr,Ca)Al2O4:Eu2+

(Y,Gd,Lu,Sc,La)BO3:Ce3+,Tb3+

(Ba,Sr,Ca)2(Mg,Zn)Si2O7:Eu2+

(Mg,Ca,Sr,Ba,Zn)2Si1_xO4_2x:Eu2+ (wherein 0<x=0.2)

(Sr,Ca,Ba)(Al,Ga,m)2S4:Eu2+

(Lu,Sc,Y,Tb)2_u_vCevCa1+uLiwMg2_wPw(Si,Ge)

3_w012_u/2 where −O.SSu^1; 0<v£Q.1; and OSw^O.2

(Ca,Sr)8(Mg,Zn)(SiO4)4Cl2:Eu2+,Mn2+

Na2Gd2B2O7:Ce3+,Tb3+

(Sr,Ca,Ba,Mg,Zn)2P2O7:Eu2+,Mn2+

(Gd,Y,Lu,La)2O3:Eu3+,Bi3+

(Gd,Y,Lu,La)2O2S:Eu3+,Bi3+

(Gd,Y,Lu,La)VO4:Eu3+,Bi3+

(Ca,Sr)S:Eu2+,Ce3+

(Y,Gd,Tb,La,Sm,Pr,Lu)3(Sc,Al,Ga)5_nO12_3/2n:Ce3+

(wherein 0^0^0.5)

ZnS:Cu+,Cl˜

ZnS:Cu+,Al3+

ZnS:Ag+,Al3+

SrY2S4:Eu2+

CaLa2S4:Ce3+

(Ba,Sr,Ca)MgP2O7:Eu2+,Mn2+

(Y,Lu)2WO6:Eu3+,Mo6+

CaWO4

(Y,Gd,La)2O2S:Eu3+

(Y,Gd,La)2O3:Eu3+

(Ca,Mg)xSyO:Ce

(Ba,Sr, Ca)nSinNn:Eu2+ (wherein 2n+4=3n)

Ca3(SiO4)Cl2:Eu2+

ZnS:Ag+,Cl˜

(Y,Lu,Gd)2_nCanSi4N6+nCl_n:Ce3+, (wherein OSn^O.5)

(Lu,Ca,Li,Mg,Y)alpha-SiAlON doped with Eu2+ and/or Ce3+

(Ca,Sr,Ba)SiO2N2:Eu2+,Ce3+

(Sr, Ca)AlSiN3:Eu2+

CaAlSi(ON)3:Eu2+

Sr10(PO4)6Cl2:Eu2+

(BaSi)O12N2:Eu2+

For purposes of the application, it is understood that when a phosphorhas two or more dopant ions (i.e. those ions following the colon in theabove phosphors), this is to mean that the phosphor has at least one(but not necessarily all) of those dopant ions within the material. Thatis, as understood by those skilled in the art, this type of notationmeans that the phosphor can include any or all of those specified ionsas dopants in the formulation.

While the above is a full description of the specific embodiments,various modifications, alternative constructions and equivalents may beused. As an example, the packaged device can include any combination ofelements described above, as well as outside of the presentspecification. Additionally, the above has been generally described interms of one or more entities that may be one or more phosphor materialsor phosphor like materials, but it would be recognized that other“energy-converting luminescent materials,” which may include one or morephosphors, semiconductors, semiconductor nanoparticles (“quantum dots”),organic luminescent materials, and the like, and combinations of them,can also be used. In one or more preferred embodiments, the energyconverting luminescent materials can generally be one or more wavelengthconverting material and/or materials or thicknesses of them.Furthermore, the above has been generally described in electromagneticradiation that directly emits and interacts with the wavelengthconversion materials, but it would be recognized that theelectromagnetic radiation can be reflected and then interacts with thewavelength conversion materials or a combination of reflection anddirect incident radiation. In other embodiments, the presentspecification describes one or more specific gallium and nitrogencontaining surface orientations, but it would be recognized that any oneof a plurality of family of plane orientations can be used. Of course,there can be other variations, modifications, and alternatives.Therefore, the above description and illustrations should not be takenas limiting the scope of the present invention which is defined by theappended claims.

What is claimed is:
 1. A packaged light emitting device for a displayapplication, the device comprising: a substrate member having a surfaceregion, the surface region comprising an n-type contact region; at leastone light emitting diode overlying the surface region, the at least onelight emitting diode being fabricated on a substrate comprisingsemipolar or nonpolar GaN, and the at least one light emitting diodeconfigured to emit electromagnetic radiation of a first wavelength, theat least one light emitting diode (LED) comprising an active region, theactive region being provided by metal organic chemical vapor deposition,the first wavelength being a blue wavelength ranging from about 430nanometers to about 490 nanometers; an optically transparent memberhaving a substantial thickness and a first side and being coupled to theat least one light emitting diode; by an optical path provided having asubstantial length between the at least one light emitting diode and thefirst side of the optically transparent member; and a transparentphosphor having a thickness overlying the first side of the opticallytransparent member and thereby being separated from said light emittingdiode by at least the substantial length, and being configured to beexcited by emission from the at least one light emitting diode to emitelectromagnetic radiation of a second wavelength,; wherein thetransparent phosphor comprises multiple phosphor entities and there is agap between the transparent phosphor and the LED.
 2. The device of claim1, wherein the optical path comprises an optical coupling material, themetal organic chemical vapor deposition being provided at atmosphericpressure and the active region comprising a multiple quantum well, and ap-type contact region formed overlying the active region, the multiplequantum well comprises an InGaN/GaN multiple quantum well to form theactive region.
 3. The device of claim 1, wherein the at least one lightemitting diode is configured to emit substantially polarized emissionsof the first wavelength.
 4. The device of claim 1, wherein thetransparent phosphor is configured to emit substantially polarizedelectromagnetic radiation of the second wavelength.
 5. The device ofclaim 1, wherein the at least one light emitting diode comprises aquantum well region characterized by an electron wave function and ahole wave function, which are substantially overlapped within apredetermined spatial region of the quantum well region.
 6. The deviceof claim 1, wherein the transparent phosphor is placed in closeproximity to the at least one light emitting diode.
 7. The device ofclaim 4, wherein at least one surface of the transparent phosphor issubstantially flat and is parallel to the surface of the at least onelight emitting diode.
 8. The device of claim 4, wherein at least onesurface of the transparent phosphor is substantially flat and is at anoblique angle with respect to the surface of the at least one lightemitting diode.
 9. The device of claim 4, wherein the transparentphosphor has a sawtooth pattern surface.
 10. The device of claim 4,wherein the transparent phosphor includes a plurality of microlenses.11. The device of claim 4, wherein the transparent phosphor includes adome-shaped structure.
 12. The device of claim 4, wherein at least onesurface of the transparent phosphor is characterized by a shapeconfigured for light extraction including both primary and secondarypolarization.
 13. The device of claim 1, wherein the transparentphosphor overlies a first side of the optically transparent member, thefirst side facing the at least one light emitting diode.
 14. The deviceof claim 1, wherein the transparent phosphor overlies a second side ofthe optically transparent member, the second side facing away from theat least one light emitting diode.
 15. The device of claim 1, whereinthe transparent phosphor is configured to emit yellow light.
 16. Thedevice of claim 15, wherein the yellow light is substantially polarizedlight.
 17. The device of claim 1, wherein the transparent phosphorcomprises a blend of phosphors capable of emitting substantially greenlight and substantially red light.
 18. The device of claim 17, whereinthe phosphors capable of emitting substantially green light are selectedfrom (Ba,Sr,Ca)MgAl₁₀O₁₇:Eu²⁺,Mn²⁺ (BAMn); (Ba,Sr,Ca)Al₂O₄:Eu²⁺;(Y,Gd,Lu,Sc,La)BO₃:Ce³⁺,Tb³⁺; Ca₈Mg(SiO₄)₄Cl₂:Eu²⁺, Mn²⁺;(Ba,Sr,Ca)₂SiO₄:Eu²⁺; (Ba,Sr,Ca)₂(Mg,Zn)Si₂O₇:Eu²⁺;(Sr,Ca,Ba)(Al,Ga,In)₂S₄:Eu²⁺; (Y,Gd,Tb,La,Sm,Pr,Lu)₃(Al,Ga)₅O₁₂:Ce³⁺;(Ca,Sr)₈(Mg,Zn)(SiO₄)₄Cl₂:Eu²⁺, Mn²⁺ (CASI); Na₂Gd₂B₂O₇:Ce³⁺; Tb³⁺;(Ba,Sr)₂(Ca,Mg,Zn)B₂O₆:K,Ce,Tb; and a combination of any of theforegoing.
 19. The device of claim 17, wherein the phosphors capable ofemitting substantially red light are selected from(Gd,Y,Lu,La)₂O₃:Eu³⁺,Bi³⁺; (Gd,Y,Lu,La)₂O₂S:Eu³⁺,Bi³⁺;(Gd,Y,Lu,La)VO₄:Eu³⁺,Bi³⁺; Y₂(O,S)₃:Eu³⁺; Ca_(1-x)Mo_(1-y)Si_(y)O₄:,where 0.05≤x≤0.5, 0≤y≤0.1; (Li,Na,K)₅Eu(W,Mo)O₄; (Ca,Sr)S:Eu²⁺;SrY₂S₄:Eu²⁺; CaLa₂S₄:Ce³⁺; (Ca,Sr)S:Eu²⁺; 3.5MgO*0.5MgF₂*GeO₂:Mn⁴⁺(MFG); (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺,Mn²⁺; (Y,Lu)₂WO₆:Eu³⁺,Mo⁶⁺;(Ba,Sr,Ca)₃Mg_(x)Si₂O₈:Eu²⁺,Mn²⁺, wherein 1<x≤2;(RE_(1-y)Ce_(y))Mg_(2-x)Li_(x)Si_(3-x)P_(x)O₁₂, where RE is at least oneof Sc, Lu, Gd, Y, and Tb, 0.0001<x<0.1 and 0.001<y<0.1; (Y, Gd, Lu,La)_(2-x)Eu_(x)W_(1-y)Mo_(y)O₆, where 0.5≤x.≤1.0, 0.01≤y≤1.0;(SrCa)_(1-x)Eu_(x)Si₅N₈, where 0.01≤x≤0.3; SrZnO₂:Sm³⁺; M_(m)O_(n)X,wherein M is selected from the group of Sc, Y, a lanthanide, an alkaliearth metal and mixtures thereof; X is a halogen; 1≤m≤3; and 1≤n≤4, andwherein the lanthanide doping level can range from 0.1 to 40% spectralweight; Eu³⁺ activated phosphate or borate phosphors; and a combinationof any of the foregoing.
 20. The device of claim 17, wherein the blendof phosphor comprises at least one of (Y, Gd, Tb, Sc, Lu, La)₃(Al, Ga,In)₅O₁₂:Ce³⁺, SrGa₂S₄:Eu²⁺, and SrS:Eu²⁺.
 21. The device of claim 1,wherein the transparent phosphor comprises a blend of phosphors capableof emitting substantially blue light, substantially green light, andsubstantially red light.
 22. The device of claim 21, wherein thephosphors capable of emitting substantially blue light are selected from(Ba,Sr,Ca)₅(PO₄)₃(Cl,F,Br,OH):Eu²⁺,Mn²⁺;Sb³⁺,(Ba,Sr,Ca)MgAl₁₀O₁₇:Eu²⁺,Mn²⁺; (Ba,Sr,Ca)BPO₅:Eu²⁺,Mn²⁺;(Sr,Ca)₁₀(PO₄)₆*nB₂O₃:Eu²⁺; 2SrO*0.84P₂O₅*0.16B₂O₃:Eu²⁺;Sr₂Si₃O₈*2SrCl₂:Eu²⁺; (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺, Mn²⁺; Sr₄Al₁₄O₂₅:Eu²⁺(SAE); BaAl₈O₁₃:Eu²⁺; and a combination of any of the foregoing.
 23. Thedevice of claim 21, wherein the phosphors capable of emittingsubstantially green light are selected from of(Ba,Sr,Ca)MgAl₁₀O₁₇:Eu²⁺,Mn²⁺ (BAMn); (Ba,Sr,Ca)Al₂O₄:Eu²⁺;(Y,Gd,Lu,Sc,La)BO₃:Ce³⁺, Tb³⁺; Ca₈Mg(SiO₄)₄ Cl₂:Eu²⁺,Mn²⁺;(Ba,Sr,Ca)₂SiO₄:Eu²⁺; (Ba,Sr,Ca)₂(Mg,Zn)Si₂O₇:Eu²⁺;(Sr,Ca,Ba)(Al,Ga,In)₂S₄:Eu²⁺; (Y,Gd,Tb,La,Sm,Pr,Lu)₃(Al,Ga)₅O₁₂:Ce³⁺;(Ca,Sr)₈(Mg,Zn)(SiO₄)₄Cl₂:Eu²⁺,Mn²⁺ (CASI); Na₂Gd₂B₂O₇:Ce³⁺,Tb³⁺;(Ba,Sr)₂(Ca,Mg,Zn)B₂O₆:K,Ce,Tb; and a combination of any of theforegoing.
 24. The device of claim 21, wherein the phosphors capable ofemitting substantially red light are selected from(Gd,Y,Lu,La)₂O₃:Eu³⁺,Bi³⁺; (Gd,Y,Lu,La)₂O₂S:Eu³⁺, Bi³⁺;(Gd,Y,Lu,La)VO₄:Eu³⁺,Bi³⁺; Y₂(O,S)₃:Eu³⁺; Ca_(1-x)Mo_(1-y)Si_(y)O₄,where 0.05≤x≤0.5, 0≤y≤0.1; (Li,Na,K)₅Eu(W,Mo)O₄; (Ca,Sr)S:Eu²⁺;SrY₂S₄:Eu²⁺; CaLa₂S₄:Ce³⁺; (Ca,Sr)S:Eu²⁺; 3.5MgO*0.5MgF₂*GeO₂:Mn⁴⁺(MFG); (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺,Mn²⁺; (Y,Lu)₂WO₆:Eu³⁺, Mo⁶⁺;(Ba,Sr,Ca)₃Mg_(x)Si₂O₈:Eu²⁺,Mn²⁺, wherein 1<x≤2;(RE_(1-y)Ce_(y))Mg_(2-x)Li_(x)Si_(3-x)P_(x)O₁₂, where RE is at least oneof Sc, Lu, Gd, Y, and Tb, 0.0001<x<0.1 and 0.001<y<0.1; (Y, Gd, Lu,La)_(2-x)Eu_(x)W_(1-y)Mo_(y)O₆, where 0.5≤x.≤1.0, 0.01≤y≤1.0;(SrCa)_(1-x)Eu_(x)Si₅N₈, where 0.01≤x≤0.3; SrZnO₂:Sm⁺³; M_(m)O_(n)X,wherein M is selected from the group of Sc, Y, a lanthanide, an alkaliearth metal and mixtures thereof; X is a halogen; 1≤m≤3; and 1≤n≤4, andwherein the lanthanide doping level can range from 0.1 to 40% spectralweight; Eu³⁺ activated phosphate or borate phosphors; and a combinationof any of the foregoing.
 25. The device of claim 21, wherein thetransparent phosphor comprises at least one of (Y, Gd, Tb, Sc, Lu,La)₃(Al, Ga, In)₅O₁₂:Ce³⁺,SrGa₂S₄:Eu²⁺, and SrS:Eu²⁺.
 26. The device ofclaim 1, wherein the transparent phosphor comprises a blend of phosphorscapable of emitting substantially blue light, substantially green light,substantially red light, and substantially yellow or orange light. 27.The device of claim 1, wherein the thickness of the transparent phosphoris no greater than about one millimeter.
 28. A packaged laser diodedevice, the device comprising: a substrate member having a surfaceregion; at least one laser diode overlying the surface region, the atleast one laser diode being fabricated on a substrate comprisingsemipolar or nonpolar GaN, and the at least one laser diode configuredto emit electromagnetic radiation of a first wavelength, the at leastone laser diode comprising an active region, the active region beingprovided by metal organic chemical vapor deposition, the firstwavelength being in the violet region of 390 nm to 430 nm or in the blueregion of 430 nm to 490 nm; an optically transparent member having asubstantial thickness and a first side and being coupled to the at leastone laser diode by an optical path having a substantial length betweenthe at least one laser diode and the first side of the opticallytransparent member; and a transparent phosphor having a thicknessoverlying the first side of the optically transparent member and therebybeing separated from the at least one laser diode by at least thesubstantial length, and being configured to be excited by emission fromthe at least one laser diode to emit electromagnetic radiation of asecond wavelength; wherein the transparent phosphor comprises multiplephosphor entities.
 29. The device of claim 28, wherein the at least onelaser diode is configured to emit substantially polarized emissions ofthe first wavelength.
 30. The device of claim 28, wherein at least onesurface of the transparent phosphor is substantially flat and isparallel to the surface of the at least one laser diode.
 31. The deviceof claim 28, wherein at least one surface of the transparent phosphor ischaracterized by a shape configured for light extraction including bothprimary and secondary polarization.
 32. The device of claim 28, whereinthe transparent phosphor is a single crystal or ceramic garnet-basedphosphor.
 33. The device of claim 32, wherein the garnet-based phosphoris a YAG-based phosphor configured to emit substantially yellow light.34. The device of claim 28, wherein the transparent phosphor comprises ablend of phosphors capable of emitting substantially green light andsubstantially red light.
 35. The device of claim 28, wherein thetransparent phosphor comprises a blend of phosphors capable of emittingsubstantially green light and substantially red light; and wherein thephosphors capable of emitting substantially green light are selectedfrom (Ba,Sr,Ca)MgAl₁₀O₁₇:Eu²⁺,Mn²⁺ (BAMn); (Ba,Sr,Ca)Al₂O₄:Eu²⁺;(Y,Gd,Lu,Sc,La)BO₃:Ce³⁺,Tb³⁺; Ca₈Mg(SiO₄)₄Cl₂:Eu²⁺,Mn²⁺;(Ba,Sr,Ca)₂SiO₄:Eu²⁺; (Ba,Sr,Ca)₂(Mg,Zn)Si₂O₇:Eu²⁺;(Sr,Ca,Ba)(Al,Ga,In)₂S₄:Eu²⁺; (Y,Gd,Tb,La,Sm,Pr,Lu)₃(Al,Ga)₅O₁₂:Ce³⁺;(Ca,Sr)₈(Mg,Zn)(SiO₄)₄Cl₂:Eu²⁺,Mn²⁺ (CASI); Na₂Gd₂B₂O₇:Ce³⁺; Tb³⁺;(Ba,Sr)₂(Ca,Mg,Zn)B₂O₆:K,Ce,Tb; and a combination of any of theforegoing; and wherein the phosphors capable of emitting substantiallyred light are selected from (Gd,Y,Lu,La)₂O₃:Eu³⁺,Bi³⁺;(Gd,Y,Lu,La)₂O₂S:Eu³⁺,Bi³⁺; (Gd,Y,Lu,La)VO₄:Eu³⁺,Bi³⁺; Y₂(O,S)₃:Eu³⁺;Ca_(1-x)Mo_(1-y)Si_(y)O₄:, where 0.05≤x≤0.5, 0≤y≤0.1;(Li,Na,K)₅Eu(W,Mo)O₄; (Ca,Sr)S:Eu²⁺; SrY₂S₄:Eu²⁺; CaLa₂S₄:Ce³⁺;(Ca,Sr)S:Eu²⁺; 3.5MgO*0.5MgF₂*GeO₂:Mn⁴⁺ (MFG);(Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺,Mn²⁺; (Y,Lu)₂WO₆:Eu³⁺,Mo⁶⁺;(Ba,Sr,Ca)₃Mg_(x)Si₂O₈:Eu²⁺,Mn²⁺, wherein 1≤x≤2;(RE_(1-y)Ce_(y))Mg_(2-x)Li_(x)Si_(3-x)P_(x)O₁₂, where RE is at least oneof Sc, Lu, Gd, Y, and Tb, 0.0001<x<0.1 and 0.001<y<0.1; (Y, Gd, Lu,La)_(2-x)Eu_(x)W_(1-y)Mo_(y)O₆, where 0.5≤x.≤1.0, 0.01≤y≤1.0;(SrCa)_(1-x)Eu_(x)Si₅N₈, where 0.01≤x≤0.3; SrZnO₂:Sm³⁺; M_(m)O_(n)X,wherein M is selected from the group of Sc, Y, a lanthanide, an alkaliearth metal and mixtures thereof; X is a halogen; 1≤m≤3; and 1≤n≤4, andwherein the lanthanide doping level can range from 0.1 to 40% spectralweight Eu³⁺ activated phosphate or borate phosphors; and a combinationof any of the foregoing; and wherein the blend of phosphor comprises atleast one of (Y, Gd, Tb, Sc, Lu, La)₃(Al, Ga, In)₅O₁₂:Ce³⁺,SrGa₂S₄:Eu²⁺, and SrS:Eu²⁺.
 36. The device of claim 28, wherein thetransparent phosphor comprises a blend of phosphors capable of emittingsubstantially blue light, substantially green light, and substantiallyred light.
 37. The device of claim 28, wherein the transparent phosphorcomprises a blend of phosphors capable of emitting substantially bluelight, substantially green light, and substantially red light, whereinthe phosphors capable of emitting substantially blue light are selectedfrom (Ba,Sr,Ca)₅(PO₄)₃(Cl,F,Br,OH):Eu²⁺,Mn²⁺;Sb³⁺,(Ba,Sr,Ca)MgAl₁₀O₁₇:Eu²⁺,Mn²⁺; (Ba,Sr,Ca)BPO₅:Eu²⁺,Mn²⁺;(Sr,Ca)₁₀(PO₄)₆*nB₂O₃:Eu²⁺; 2SrO*0.84P₂O₅*0.16B₂O₃:Eu²⁺;Sr₂Si₃O₈*2SrCl₂:Eu²⁺; (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺,Mn²⁺; Sr₄Al₁₄O₂₅:Eu²⁺(SAE); BaAl₈O₁₃:Eu²⁺; and a combination of any of the foregoing; andwherein the phosphors capable of emitting substantially green light areselected from of (Ba,Sr,Ca)MgAl₁₀O₁₇:Eu²⁺,Mn²⁺ (BAMn);(Ba,Sr,Ca)Al₂O₄:Eu²⁺; (Y,Gd,Lu,Sc,La)BO₃:Ce³⁺,Tb³⁺;Ca₈Mg(SiO₄)₄Cl₂:Eu²⁺,Mn²⁺; (Ba,Sr,Ca)₂SiO₄:Eu²⁺;(Ba,Sr,Ca)₂(Mg,Zn)Si₂O₇:Eu²⁺; (Sr,Ca,Ba)(Al,Ga,In)₂S₄:Eu²⁺;(Y,Gd,Tb,La,Sm,Pr,Lu)₃(Al,Ga)₅O₁₂:Ce³⁺;(Ca,Sr)₈(Mg,Zn)(SiO₄)₄Cl₂:Eu²⁺,Mn²⁺ (CASI); Na₂Gd₂B₂O₇:Ce³⁺; Tb³⁺;(Ba,Sr)₂(Ca,Mg,Zn)B₂O₆:K,Ce,Tb; and a combination of any of theforegoing; and wherein the phosphors capable of emitting substantiallyred light are selected from (Gd,Y,Lu,La)₂O₃:Eu³⁺,Bi³⁺;(Gd,Y,Lu,La)₂O₂S:Eu³⁺,Bi³⁺; (Gd,Y,Lu,La)VO₄:Eu³⁺,Bi³⁺; Y₂(O,S)₃:Eu³⁺;Ca_(1-x)Mo_(1-y)Si_(y)O₄; where 0.05≤x≤0.5, 0≤y≤0.1;(Li,Na,K)₅Eu(W,Mo)O₄; (Ca,Sr)S:Eu²⁺; SrY₂S₄:Eu²⁺; CaLa₂S₄:Ce³⁺;(Ca,Sr)S:Eu²⁺; 3.5MgO*0.5MgF₂*GeO₂:Mn⁴⁺ (MFG);(Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺,Mn²⁺; (Y,Lu)₂WO₆:Eu³⁺,Mo⁶⁺;(Ba,Sr,Ca)₃Mg_(x)Si₂O₈:Eu²⁺,Mn²⁺, wherein 1<x≤2;(RE_(1-y)Ce_(y))Mg_(2-x)Li_(x)Si_(3-x)P_(x)O₁₂, where RE is at least oneof Sc, Lu, Gd, Y, and Tb, 0.0001<x<0.1 and 0.001<y<0.1; (Y, Gd, Lu,La)_(2-x)Eu_(x)W_(1-y)Mo_(y)O₆, where 0.5≤x.≤1.0, 0.01≤y≤1.0;(SrCa)_(1-x)Eu_(x)Si₅N₈, where 0.01≤x≤0.3; SrZnO₂:Sm³⁺; M_(m)O_(n)X,wherein M is selected from the group of Sc, Y, a lanthanide, an alkaliearth metal and mixtures thereof; X is a halogen; 1≤m≤3; and 1≤n≤4, andwherein the lanthanide doping level can range from 0.1 to 40% spectralweight Eu³⁺ activated phosphate or borate phosphors; and a combinationof any of the foregoing; and wherein the blend of phosphor comprises atleast one of (Y, Gd, Tb, Sc, Lu, La)₃(Al, Ga, In)₅O₁₂:Ce³⁺,SrGa₂S₄:Eu²⁺, and SrS:Eu²⁺.
 38. A packaged laser diode device, thedevice comprising: a substrate member having a surface region; at leastone laser diode overlying the surface region, the at least one laserdiode being fabricated on a substrate comprising GaN, and the at leastone laser diode configured to emit electromagnetic radiation of a firstwavelength, the at least one laser diode comprising an active region,the active region being provided by metal organic chemical vapordeposition, the first wavelength being in the violet region of 390 nm to430 nm or in the blue region of 430 nm to 490 nm; an opticallytransparent member having a substantial thickness and a first side, andbeing coupled to the at least one laser diode by an optical path havinga substantial length between the at least one laser diode and the firstside of said optically transparent member; and a transparent phosphorcomprising at least a ceramic or single-crystal garnet-based phosphor,the transparent phosphor having a thickness and disposed on the firstside of the optically transparent member, thereby being separated fromsaid light emitting diode by at least the substantial length, thetransparent phosphor configured to be excited by emission from the atleast one laser diode to emit electromagnetic radiation of a secondwavelength, wherein the transparent phosphor comprises multiple phosphorentities.
 39. The device of claim 38, wherein the at least one laserdiode is configured to emit substantially polarized emissions of thefirst wavelength.
 40. The device of claim 38, wherein at least onesurface of the transparent phosphor is substantially flat and isparallel to the surface of the at least one laser diode.
 41. The deviceof claim 38, wherein at least one surface of the transparent phosphor ischaracterized by a shape configured for light extraction including bothprimary and secondary polarization.
 42. The device of claim 38, whereinthe garnet-based phosphor is a YAG-based phosphor and configured to emityellow light.
 43. A packaged laser diode device for an automotiveapplication, the device comprising: a substrate member having a surfaceregion; at least one laser diode overlying the surface region, the atleast one laser diode being fabricated on a substrate comprising GaN,and the at least one laser diode configured to emit electromagneticradiation of a first wavelength, the at least one laser diode comprisingan active region, the active region being provided by metal organicchemical vapor deposition, the first wavelength being a in the violetregion of 390 nm to 430 nm or in the blue region of 430 nm to 490 nm; anoptically transparent member having a substantial thickness and a firstside, and being coupled to the at least one laser diode by an opticalpath provided between the at least one laser diode and the first side ofthe optically transparent member; and a transparent phosphor comprisingat least a ceramic or single-crystal YAG-based phosphor, the transparentphosphor having a thickness and being disposed on the first side of theoptically transparent member, and thereby being separated from saidlight emitting diode by at least the substantial length, and being thetransparent phosphor configured to be excited by emission from the atleast one laser diode to emit electromagnetic radiation of a secondwavelength; wherein the second wavelength comprises a yellow light,wherein the transparent phosphor comprises multiple phosphor entitiesand there is a gap between the transparent phosphor and the laser diode.44. The device of claim 43, wherein the at least one laser diode isconfigured to emit substantially polarized emissions of the firstwavelength.
 45. The device of claim 43, wherein at least one surface ofthe transparent phosphor is substantially flat and is parallel to thesurface of the at least one laser diode.
 46. An automotive lampcomprising the device of claim 43.